Self-assembled In(Ga) As islands on Ge substrate

Knuuttila, L.; Korkala, T.; Sopanen, Markku; Lipsanen, Harri

doi:10.1016/j.jcrysgro.2004.08.063

Cited by 5 publications

(4 citation statements)

References 15 publications

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“…The deviation of peak energy by ±0.04 eV corresponds to a deviation of dot size by ±0.1 nm for InAs in this energy range. The PL peak energy (1.33 eV) observed in the present study is greater than the earlier reported value of 1.15 eV which indicates the smaller size of QDs in our case [ 16 ]. PL peak energies of other samples were found to be consistent with their corresponding dot sizes.…”

Section: Resultscontrasting

confidence: 94%

“…5 . The observed PL spectra were quite broad and very much similar to that shown by Knuuttila et al [ 16 ], although the peak energies are slightly different. Therefore, we further analyze the PL spectra by deconvolution as fitted to three distinct emission peaks (1.37, 1.33, and 1.29 eV) shown in Fig.…”

Section: Resultssupporting

confidence: 85%

“…Ge substrates have also been used for the fabrication of InGaAs/AlGaAs lasers [ 11 ] and (Al)GaInP multi-quantum well LEDs [ 15 ]. Surprisingly, there is only one report by Knuuttila et al [ 16 ] describing the growth of non-uniformly distributed InAs islands directly on Ge substrate without any buffer layer. In the growth of InAs QDs directly on Ge substrate by Stranski–Krastanow (SK) growth mode, the formation of anti phase domains (APDs) is inevitable because the dot formation takes place after a thin wetting layer is grown.…”

Section: Introductionmentioning

confidence: 99%

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Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

et al. 2009

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Self-assembled InAs quantum dots (QDs) were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450°C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs). The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

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Section: Resultscontrasting

confidence: 94%

Section: Resultssupporting

confidence: 85%

Section: Introductionmentioning

confidence: 99%

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Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

et al. 2009

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“…After that, they decrease with temperature. Others groups [20] obtained islands density values in the same order of our results. We signal that results depicted in Fig.…”

Section: Resultssupporting

confidence: 89%