Stranski–Krastanow growth of multilayer In(Ga)As/GaAs QDs on Germanium substrate

Banerjee, S.; Halder, N. C.; Chakrabarti, Subhananda

doi:10.1007/s00339-010-5727-8

Cited by 6 publications

(2 citation statements)

References 16 publications

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“…This proves that it is the strain induced by the multilayer growth of In(Ga)As QDs which is responsible for multimodal size distribution of the QDs, not the strain due to the heteroepitaxial growth of GaAs on Ge substrate. Further detailed investigation of the material quality of nearly similar QD heterostructure grown on Ge substrate has been already reported by our group in reference [10]. Finally, Fig.…”

Section: Growth and Experimental Detailsmentioning

confidence: 96%

Self‐assembled InGaAs/GaAs quantum dot photodetector on germanium substrate

Banerjee

Halder

Chakrabarti

2011

Phys. Status Solidi C

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We are reporting the growth of 30 layer self‐assembled InGaAs/GaAs quantum dot infrared photodetector (QDIP) structures on Ge substrate where a proper interface formation procedure was followed to minimise the defect density at the GaAs/Ge interface. The interface formation technique includes deposition of a migration enhanced epitaxy (MEE) grown GaAs layer followed by deposition of a thin GaAs layer grown with multiple annealing steps in between. The structural and optical properties of the heterostructure are evaluated by Transmission Electron Microscopy (TEM) and Photoluminescence (PL). The I‐V curve for the grown device structure has been demonstrated. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Growth and Experimental Detailsmentioning

confidence: 96%

Self‐assembled InGaAs/GaAs quantum dot photodetector on germanium substrate

Banerjee

Halder

Chakrabarti

2011

Phys. Status Solidi C

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“…Recent advanced epitaxial techniques with monolithic integration of GaAs on Ge substrates and InAs/GaAs QDs gain region have enabled the realization of PL emission of InAs/GaAs QDs on a Ge substrate. However, the emission wavelength was limited at ∼1.1 μm below RT, and no laser was achieved [74,75]. One of the biggest challenges in such an effort was the formation of APBs when the typical procedure of using a self-terminating arsenide (As) layer was adopted for the initial GaAs layer grown on a Ge substrate, see figure 7 Following the first demonstration of an electrically pumped 1.3 μm InAs/GaAs QD laser on a Ge substrate, the first successful demonstration of an electrically pumped CW 1.3 μm InAs/GaAs QD laser grown directly on a Ge-on-Si virtual substrate followed soon after by the same research group [77].…”

Section: Ge and Ge-on-si Substratesmentioning

confidence: 99%

III–V quantum-dot lasers monolithically grown on silicon

Liao

Chen

Park

et al. 2018

Semicond. Sci. Technol.

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The monolithic growth of III-V semiconductor lasers on Si remains the 'holy grail' for full-scale deployment of Si photonics with reduced cost and added flexibility. Further, semiconductor lasers with active regions made from quantum dots (QDs) have shown superior device performance over conventional quantum well (QW) counterparts and offer new functionalities. There are other advantages of QDs for monolithic III-V-on-Si integration over QWs, such as QD devices being less sensitive to defects. It is, therefore, not surprising that the past decade has seen rapid progress in research on monolithic III-V QD lasers on Si, with a view to leveraging the benefits of QD gain region technology while benefitting from the economics of scale enabled by monolithic growth. This review has a special focus on O-band III-V QD lasers monolithically grown on Si for Si photonic optical interconnects, including Fabry-Perot lasers, distributed-feedback laser array, and micro-lasers. The successes and challenges for developing monolithic III-V lasers on Si are discussed.

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