Atomic force microscopy: a key to direct wafer bonding technology

Watt, V.H.C.; Moinpour, Mansour; Bower, R.W.; Sundararaman, R.

doi:10.1007/bf00456558

Cited by 5 publications

(2 citation statements)

References 6 publications

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“…This value is sufficiently low to enable the bonding of another wafer and layer by SAB at room temperature in vacuum. 37) 3.4. Evaluation and observation of voids formed when bonding silicon wafer to deposited diamond layer of base wafer by SAB Figure 7 shows an IR transmission image of the abovementioned sample after bonding a silicon wafer to the polished diamond layer by SAB at room temperature under a pressure of 1 × 10 −5 Pa.…”

Section: Evaluation Of Roughness Of Polished Diamond Layer On Base Wafermentioning

confidence: 99%

SOI wafer fabricated with a diamond BOX layer using surface activated bonding at room temperature

Koga

Kurita

2018

Jpn. J. Appl. Phys.

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We propose a fabrication process for a silicon on insulator (SOI) wafer with a diamond buried oxide (BOX) layer by combining nanodiamondseeding deposition and a surface-activated bonding technique for high-frequency and power device applications. The diamond layer was deposited on a base wafer by the spin-coating of nanodiamonds and microwave-plasma-enhanced chemical vapor deposition. The thermal conductivity of this deposited diamond layer was three times that of a conventional SiO 2 layer. A silicon wafer was then bonded to the diamond layer at room temperature in ultrahigh vacuum without forming any voids. Additionally, this SOI wafer was used to fabricate devices at 1000 °C. Therefore, we believe that this SOI wafer with a diamond BOX layer and its fabrication process are important for the realization of self-heating devices such as next-generation high-frequency and power devices.

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Section: Evaluation Of Roughness Of Polished Diamond Layer On Base Wafermentioning

confidence: 99%

SOI wafer fabricated with a diamond BOX layer using surface activated bonding at room temperature

Koga

Kurita

2018

Jpn. J. Appl. Phys.

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“…It is known that direct bonding requires a smooth surface with a root mean square (rms) roughness of 0.5 nm or less. 32,33) The surface rms roughness at the 1 × 1 μm 2 scan area was measured before and after the different wet treatments. The average rms roughness over three measurements of the GaN surface was 0.153 ± 0.004 nm before the wet treatments, 0.154 ± 0.012 nm after the SPM treatment (40 min), 0.179 ± 0.009 nm after the APM treatment (40 min), and 0.159 ± 0.002 nm after the SPM (20 min) and APM (20 min) treatment, respectively.…”

Section: Chip-scale Bondingmentioning

confidence: 99%

Hydrophilic direct bonding of GaN and Si substrates by wet treatments using H₂SO₄/H₂O₂ mixture and NH₃/H₂O₂ mixture

Fukumoto

Matsumae

Kurashima

et al. 2022

Jpn. J. Appl. Phys.

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GaN substrates were directly bonded with Si substrates by wet treatments using H2SO4/H2O2 and NH3/H2O2 mixtures. Under the optimized condition, the tensile strength reached 7.36 MPa, and a part of the Si substrate was fractured within the bulk instead of the bonding interface. There is an amorphous intermediate layer with a thickness of 1.7 nm, which mainly consists of Si oxides, at the bonding interface. It is remarkable that wafer-scale GaN/Si integration was successfully achieved by using common cleaning methods. It is believed that the proposed direct bonding technique would contribute to future heterogeneous integration because the GaN and Si substrates can be bonded through the atomically thin intermediate layer without vacuum processes.

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3-dimensional microelectronic integration

Bower¹

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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A variety of technologies have been applied to the formation of three-dimensional microstructures in the past two decades. In this talk I will describe work in my group to form three-dimensional structures using direct bonding and smart cut techniques. Direct bonding of semiconductor structures developed out early work of Wallis and Pomerantz, who introduced Anodic bonding in 1969[1, 21. This was followed by direct bonding introduced by two independent groups in the mid 1980's. Lasky et al. reported the bonding of silicon and silicon dioxide to silicon dioxide, and Shimbo et al. reported the silicon to silicon direct bonding in 1985 and 1986 respectively[3, 41. The Bower research group then introduced the concept of creating three-dimensional structures using aligned direct bonding [5, 61. Several new materials were added to expand direct bonding to Si3N4 and several silicides by this research group [7, 81. The Bower group then published papers and patents on applications on applications of aligned bonding with these materials to make simple three-dimensional structures [9, 10. 11, 121.

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Atomic force microscopy: a key to direct wafer bonding technology

Cited by 5 publications

References 6 publications

SOI wafer fabricated with a diamond BOX layer using surface activated bonding at room temperature

SOI wafer fabricated with a diamond BOX layer using surface activated bonding at room temperature

Hydrophilic direct bonding of GaN and Si substrates by wet treatments using H₂SO₄/H₂O₂ mixture and NH₃/H₂O₂ mixture

3-dimensional microelectronic integration

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Atomic force microscopy: a key to direct wafer bonding technology

Cited by 5 publications

References 6 publications

SOI wafer fabricated with a diamond BOX layer using surface activated bonding at room temperature

SOI wafer fabricated with a diamond BOX layer using surface activated bonding at room temperature

Hydrophilic direct bonding of GaN and Si substrates by wet treatments using H2SO4/H2O2 mixture and NH3/H2O2 mixture

3-dimensional microelectronic integration

Contact Info

Product

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Hydrophilic direct bonding of GaN and Si substrates by wet treatments using H₂SO₄/H₂O₂ mixture and NH₃/H₂O₂ mixture