Atomic hydrogen cleaning of polar III–V semiconductor surfaces

Bell, GR; Kaijaks, NS; Dixon, RJ; McConville, Christopher F

doi:10.1016/s0039-6028(97)00914-x

Cited by 80 publications

(64 citation statements)

References 51 publications

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“…In our experiments, previous to epitaxial growth, oxides and contaminants are removed from the surface on both kind of substrates by exposing the surface to an atomic hydrogen flux using a Ta H 2 thermal cracker at low substrate temperature (T S = 450 ºC), which is significantly lower than that required for conventional thermal oxide desorption process (T S = 600 ºC) [15][16][17][18]. A H 2 base pressure of 1x10 -5 Torr was used during this process.…”

Section: Methodsmentioning

confidence: 99%

Improvement of InAs quantum dots optical properties in close proximity to GaAs(001) substrate surface

Martín‐Sánchez¹,

González²,

Alonso‐González³

et al. 2008

Journal of Crystal Growth

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In this work we demonstrate a growth process for obtaining high optical emission efficiency InAs/GaAs(001) quantum dots (QD) formed at short distance to the interface with the GaAs substrate. In particular, after an initial exposure of the substrate surface to long times of atomic hydrogen flux (t H up to 45 min) followed by a posterior growth of a GaAs buffer layer by atomic layer molecular beam epitaxy, both steps at low substrate temperature (T S =450 ºC), an enhancement of InAs QD optical emission efficiency is obtained, even at close proximity (3.5 nm) to the substrate interface. This process fulfils the strict requirements in terms of substrate temperature and buffer layer thickness (distance from the QD to the substrate interface) for its possible use as an optimal regrowth protocol on previously patterned GaAs substrates.

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Section: Methodsmentioning

confidence: 99%

Improvement of InAs quantum dots optical properties in close proximity to GaAs(001) substrate surface

Martín‐Sánchez¹,

González²,

Alonso‐González³

et al. 2008

Journal of Crystal Growth

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“…Atomic hydrogen has been demonstrated to be an effective surface preparation technique due to its ability to remove carbon-containing contaminants and native oxides (36)(37)(38). The lower temperatures required of atomic hydrogen cleaning alleviates the problems of group V desorption and surface roughening typically associated with high temperature thermal cleaning of substrates prior to epitaxial growth (36)(37)(38). A notable obstacle in III-V MOS technology is the presence of a large density of defects at the dielectric/semiconductor interface.…”

Section: Dry Etch Process Optimizationmentioning

confidence: 99%

“…The first two methods, though, carry the risk of physical and electronic damage to the near surface regions of the semiconductor due to the presence of energetic ions (36,43). Here, we employ a photonassisted hydrogenation process (46) developed by Amethyst Research Incorporated to investigate mitigation of damage induced by the fin etch process.…”

Section: Dry Etch Process Optimizationmentioning

confidence: 99%

(Invited) Towards a Vertical and Damage Free Post-Etch InGaAs Fin Profile: Dry Etch Processing, Sidewall Damage Assessment and Mitigation Options

Peralagu

Ignatova

et al. 2015

ECS Trans.

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Based on current projections, III-Vs are expected to replace Si as the n-channel solution in FinFETs at the 7nm technology node. The realisation of III-V FinFETs entails top-down fabrication via dry etch techniques. Vertical fins in conjunction with high quality sidewall MOS interfaces are required for high-performance logic devices. This, however, is difficult to achieve with dry etching. Highly anisotropic etching required of vertical fins is concomitant with increased damage to the sidewalls, resulting in the quality of the sidewall MOS interface being compromised. In this work, we address this challenge in two stages by first undertaking a systematic investigation of dry etch processing for fin formation, with the aim of obtaining high resolution fins with vertical sidewalls and clean etch surfaces. In the second stage, dry etch process optimisation and post-etch sidewall passivation schemes are explored to mitigate the damage arising from anisotropic etching required for the realisation of vertical fins.

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“…[3][4][5] Recently this technique is also being considered for Si etching in nanopatterning studies 6 and for extreme ultraviolet lithography (EUVL) systems to sustain the cleanliness of the reflective optics. Removal of photoninduced carbon contamination and surface oxidation through exposure to atomic hydrogen has been demonstrated experimentally.…”

Section: Introductionmentioning

confidence: 99%

Quantification of the atomic hydrogen flux as a function of filament temperature and H2 flow rate

Ugur

Storm

Verberk

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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An isothermal sensor is developed to quantify the atomic hydrogen flux on a surface, which can be located at any distance from the molecular hydrogen cracking unit. This flux is determined from the measured heat effect due to recombination of atomic hydrogen at the sensor surface. The temperature of the sensor was kept constant at 350 C to keep the heat losses constant during the measurement. Other heat flows due to radiative, conductive, and convective phenomena were quantified with targeted measurements. The design of the sensor allows ample area for the atomic hydrogen recombination reaction; thus enabling the flux values to be determined with high accuracy (errors were between 68:3 Â 10 15 and 63:3 Â 10 16 at cm À2 s À1 ). The atomic hydrogen flux, generated with a commercial atomic hydrogen source was measured as a function of the filament temperature in the range of 1400 À 1950 C and H 2 gas flow in the range of 7:44 Â 10 À6 to 7:44 Â 10 À5 mol=s (10-100 sccm). These measurements showed that the atomic hydrogen flux increases with both filament temperature and H 2 flux.

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Atomic hydrogen cleaning of polar III–V semiconductor surfaces

Cited by 80 publications

References 51 publications

Improvement of InAs quantum dots optical properties in close proximity to GaAs(001) substrate surface

Improvement of InAs quantum dots optical properties in close proximity to GaAs(001) substrate surface

(Invited) Towards a Vertical and Damage Free Post-Etch InGaAs Fin Profile: Dry Etch Processing, Sidewall Damage Assessment and Mitigation Options

Quantification of the atomic hydrogen flux as a function of filament temperature and H2 flow rate

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