Atomic Layer Deposition and Characterization of Dysprosium‐Doped Zirconium Oxide Thin Films

Abstract

Dy 2 O 3 doped ZrO 2 films are grown on silicon substrates using atomic layer deposition at 300°C. Dy(thd) 3 (thd ¼ 2,2,6,6tetramethyl-3,5-heptanedionato) and ZrCl 4 are used as metal precursors and H 2 O as the oxygen precursor. Despite the low growth rate of Dy 2 O 3 in a beta-diketonate/water process, the process allows deposition of thin films with the dysprosium content of few mass %. The films crystallize in the form of tetragonal zirconia already in as-deposited state and grow conformally onto 3D substrates with an aspect ratio of 1:20. The capacitors formed on the basis of the films in as-deposited and annealed states demonstrate current-voltage and capacitance behavior characteristic of those with high-permittivity dielectrics. The maximum concentration of electronic defects at oxide/electrode interfaces reaches 1.8 Â 10 11 cm À2 eV À1 .

Low temperature atomic layer deposition of zirconium oxide for inkjet printed transistor applications

“…The interface traps at 200 and 250 C are in the same order of magnitude reported for thermally evaporated hafnium oxide which was cured at 350 to 450 C. 43 The traps in ZrO 2 can be reduced using doping or high temperature treatment aer the deposition. 44,45 Our goal is to use the ALD-ZrO 2 for printed electronics, so all our samples were as-deposited. To avoid high interface traps and growth saturation, subsequent depositions of ZrO 2 for device fabrication were carried out at 200 C.…”

Interface State Reduction by Plasma-Enhanced Atomic Layer Deposition of Homogeneous Ternary Oxides

“…One would prefer a homogeneous alloy with a low defect density as compared to a multilayer stack. As compared to the hundreds of articles on ALD nanolaminates, there are relatively few reports of homogeneous ternary oxide growth using sequential pulses of different metal precursors prior to the oxidation step. − In this work, this sequential precursor method is used to deposit three ternary oxides: Al x Si y O z , Al x Nb y O z , and Al x Mo y O z . In their most common oxidation states, Si, Nb, and Mo form a series IV, V, and VI, respectively, and represent the increasing level of “difficulty” for incorporation into the Al­(III) oxide matrix.…”

Atomic layer deposition of zirconium oxide thin films

“…Owing to the many applications of ZrO 2 , it has been developed via some ALD processes. There were Zr[OC(CH 3 ) 3 ] 4 [16], ZrI 4 [17], and ZrCl 4 [18,19] studied as Zr precursors. In these studies, H 2 O was widely used as the oxygen precursor.…”