2010
DOI: 10.1016/j.tsf.2010.07.107
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Atomic layer deposition of SiO2 from Tris(dimethylamino)silane and ozone by using temperature-controlled water vapor treatment

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Cited by 39 publications
(20 citation statements)
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“…In recent years, low-temperature ALD (LT-ALD) growth of SiO 2 using many different aminosilane precursors, such as bis­(dimethylaminosilane) (BDMAS), tris­(dimethylaminosilane) (TDMAS), , bis­(ethylmethylaminosilane) (BEMAS), , bis­(diethylaminosilane) (BDEAS), ,,, and di­(isopropyl-aminosilane) (DIPAS), ,, has been demonstrated through both thermal and plasma-enhanced processes. However, only the LT-ALD of SiO 2 with DIPAS has been demonstrated with temperatures as low as 80 °C with ozone and as low as 50 °C with O 2 plasma.…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, low-temperature ALD (LT-ALD) growth of SiO 2 using many different aminosilane precursors, such as bis­(dimethylaminosilane) (BDMAS), tris­(dimethylaminosilane) (TDMAS), , bis­(ethylmethylaminosilane) (BEMAS), , bis­(diethylaminosilane) (BDEAS), ,,, and di­(isopropyl-aminosilane) (DIPAS), ,, has been demonstrated through both thermal and plasma-enhanced processes. However, only the LT-ALD of SiO 2 with DIPAS has been demonstrated with temperatures as low as 80 °C with ozone and as low as 50 °C with O 2 plasma.…”
Section: Introductionmentioning
confidence: 99%
“…Similarly, through the introduction of an amino group, aminosilane precursors play an important role of self-catalysing in Si-O formation of SiO 2 ALD. 12,25 Recently, various alkylaminosilane-based molecules with appropriately reactive functional ligands have been evaluated and tested with the aim to identify most suitable precursors for SiO 2 thin lm growth both experimentally [26][27][28][29][30][31][32] and theoretically. [15][16][17][33][34][35] It was found that an increase in the degree of alkylamino substitution on Si atom would result in a reduced deposition rate and a use of tris(alkylamino)silane-based precursors may lead to a higher degree of impurity in the lms, especially in a low temperature range of the ALD window.…”
Section: Introductionmentioning
confidence: 99%
“…It was demonstrated that the plasma method was effective in oxidizing the precursoradsorbed surface while producing OH sites for TDMAS adsorption [14]. We previously discussed the role of hydroxylation in enhancing the adsorption probability of TDMAS on the SiO 2 surface at RT [17,18]. With the plasma excited humidified argon, we also developed the RT ALD of TiO 2 with a precursor of tetrakis(dimethylamino)titanium [19].…”
Section: Introductionmentioning
confidence: 99%