Atomic processes during Cl supersaturation etching of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mtext>Si</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>100</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow><mml:mtext>−</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>

Aldao, C. M.; Agrawal, Abhishek; Butera, R. E.; Weaver, J. H.

doi:10.1103/physrevb.79.125303

Cited by 17 publications

(18 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…8 The activation barriers for Cl͑i͒ diffusion 22 and pairing 20 are 0.3-0.4 and 2.5 eV, respectively. The large barrier to pair hinders etching and results in an increase in Cl͑i͒ concentration with decreasing temperature, as demonstrated by Aldao et al 20 By reducing the temperature to 700-725 K, we have found a regime where diffusion is facile but pairing and terrace desorption of SiCl 2 are minimal. Accordingly, mobile Cl͑i͒ species can interrogate the surface and populate step sites.…”

supporting

confidence: 74%

“…Both display the inverse relationship with temperature seen for the concentration of Cl͑i͒. 20 Intriguingly, at 725 K the r-atom etch rate exceeds the nonrebonded step formation rate. Since etching produces nonrebonded steps, this suggests that some nonrebonded step units have reverted back to the rebonded structure despite the substantial energy preference, 1.8 eV/ a, for the former.…”

mentioning

confidence: 90%

“…8 Whereas insertion is expected at room temperature, it is difficult to quantify because Cl͑i͒ is highly mobile and readily converts into Cl͑a͒, an adsorbed Cl atom, at a DB. 19,20 Since the barrier for Cl͑i͒-Cl͑a͒ decay is only ϳ0.15-0.3 eV, 21 Cl͑i͒ will decay before reaching the step. For saturated surfaces, this decay route is blocked.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Adsorbate-mediated step transformations and terrace rearrangement ofSi(100)−(2×1)

et al. 2009

Self Cite

View full text Add to dashboard Cite

Scanning tunneling microscopy and density-functional theory have been combined to demonstrate structural transformations of steps of Si͑100͒-͑2 ϫ 1͒ induced by nondangling bond-terminated Cl adsorbates. We identify a stable, bridge-bonded step adsorption site and show that supersaturation facilitates the population of those sites, leading to rebonded atom etching, step retreat, and extensive terrace rearrangement from the diffusion of resultant atomic vacancy lines across the supersaturated surface. Similarities to H-Si͑100͒ are briefly discussed.

show abstract

supporting

confidence: 74%

mentioning

confidence: 90%

See 1 more Smart Citation

Adsorbate-mediated step transformations and terrace rearrangement ofSi(100)−(2×1)

et al. 2009

Self Cite

View full text Add to dashboard Cite

show abstract

“…Essential information extracted from the publications is presented below. For halogen-based etching of GaAs, [48][49][50] silicon [51][52][53][54][55][56] and other materials there is a large body of atomistic etching work not aimed at pattern transfer and replacement of plasma etching methods. This literature provides important atomic layer etching and surface chemistry background, but is not reviewed.…”

Section: Atomic Layer Etching Of Various Materials -A Brief Surveymentioning

confidence: 99%

Atomic Layer Etching at the Tipping Point: An Overview

Oehrlein

Metzler

2015

ECS J. Solid State Sci. Technol.

232

162

View full text Add to dashboard Cite

The ability to achieve near-atomic precision in etching different materials when transferring lithographically defined templates is a requirement of increasing importance for nanoscale structure fabrication in the semiconductor and related industries. The use of ultra-thin gate dielectrics, ultra thin channels, and sub-20 nm film thicknesses in field effect transistors and other devices requires near-atomic scale etching control and selectivity. There is an emerging consensus that as critical dimensions approach the sub-10 nm scale, the need for an etching method corresponding to Atomic Layer Deposition (ALD), i.e. Atomic Layer Etching (ALE), has become essential, and that the more than 30-year quest to complement/replace continuous directional plasma etching (PE) methods for critical applications by a sequence of individual, self-limited surface reaction steps has reached a crucial stage. A key advantage of this approach relative to continuous PE is that it enables optimization of the individual steps with regard to reactant adsorption, self-limited etching, selectivity relative to other materials, and damage of critical surface layers. In this overview we present basic approaches to ALE of materials, discuss similarities/crucial differences relative to thermal and plasma-enhanced ALD, and then review selected results on ALE of materials aimed at pattern transfer. The overview concludes with a discussion of opportunities and challenges ahead. A requirement of increasing importance for nanoscale device fabrication is the ability to achieve atomic scale etching control and materials selectivity during pattern transfer.1-8 An etching method corresponding to Atomic Layer Deposition (ALD), i.e. Atomic Layer Etching (ALE), is expected to satisfy these needs as critical dimensions continue to shrink below the 10 nm scale.Demonstrations of self-limited dry etching methods capable of near-atomic resolution have a long history in the dry etching community and a brief review will be presented below. Key challenges for these approaches have been specialized equipment, long process times and low throughput.9,10 However, a recent demonstration using a commercial plasma etch tool 10 and activities within the dry etching community 11 provide indications that the situation has changed, and that we may have reached for ALE the Tipping Point which Gladwell defined as the "the moment of critical mass, the threshold, the boiling point" when "ideas and products and messages and behaviors spread like viruses do".12 This is due to several factors, including unprecedented demands on dry etching technology introduced by the semiconductor device evolution according to Moore's law that can be satisfied by atomic layer etching, advanced capabilities in plasma etch, and the existence of a critical level of information on plasma etch and ALD methods as applied in the semiconductor fabrication space.In this article we will provide a review of background of these approaches, and focus on issues that have to be overcome for widespread implement...

show abstract

“…Over the years, people have been using halogen group (F, Cl, Br) plasma silicon material etching [4][5][6][7] . Searching Fluorine plasma etching mechanism of Si for improving the etching process to improve the etching efficiency, has a great significance.…”

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Simulations of Influence of Surface Temperature on Fluorine Etching of Silicon

Wang¹,

Song²,

Deng³

et al. 2013

IJAPM

View full text Add to dashboard Cite

Abstract-Molecular dynamics simulation of the reactions between gaseous fluorine atoms and silicon are performed using the development Tersoff-Brenner potential at the temperature from 500K to 1200K. The simulation results show that the Si surface temperature significantly affects the F etching. For instance, as the surface temperature rises up, the numbers of F atoms deposited on and scattered by Si surface decrease, at the same times, the number of the sputtering fluorine atoms and the reactive F atoms with surface to produce volatile compounds increase. In addition, the quantity of the F etched Si atoms increased with an increase of the surface temperature.

show abstract

Atomic processes during Cl supersaturation etching ofSi(100)−(2×1)

Cited by 17 publications

References 31 publications

Adsorbate-mediated step transformations and terrace rearrangement ofSi(100)−(2×1)

Adsorbate-mediated step transformations and terrace rearrangement ofSi(100)−(2×1)

Atomic Layer Etching at the Tipping Point: An Overview

Molecular Dynamics Simulations of Influence of Surface Temperature on Fluorine Etching of Silicon

Contact Info

Product

Resources

About