Atomic structure analysis of stacking faults and misfit dislocations at 3C-SiC/Si(0 0 1) interfaces by aberration-corrected transmission electron microscopy

Yamasaki, Jun; Inamoto, Shin; Nomura, Yoshihiko; Tamaki, Hirokazu; Tanaka, Nobuo

doi:10.1088/0022-3727/45/49/494002

Cited by 23 publications

(14 citation statements)

References 27 publications

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“…10b) are in agreement with the CSS type. The results of this study, combining with the view given in Wen et al (2009), indicate that both S1a and CSS type Lomer dislocations should be stable and frequently existed at the 3C-SiC/Si (0 0 1) interface, if not discussing about the core structure of Lomer dislocation proposed recently (Inamoto et al, 2011;Yamasaki et al, 2012).…”

Section: Atomic Configuration Of Interfacial Misfit Dislocationssupporting

confidence: 56%

Restoring defect structures in 3C-SiC/Si (001) from spherical aberration-corrected high-resolution transmission electron microscope images by means of deconvolution processing

Chen

Wan

et al. 2015

Micron

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Section: Atomic Configuration Of Interfacial Misfit Dislocationssupporting

confidence: 56%

Restoring defect structures in 3C-SiC/Si (001) from spherical aberration-corrected high-resolution transmission electron microscope images by means of deconvolution processing

Chen

Wan

et al. 2015

Micron

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“…Stacking faults (SFs) are the most important ones dominating over the entire 3C-SiC layer thickness. In literature, three types of SFs are observed depending on the number of atomic planes with the wrong orientation: SFs can have 1, 2, or 3 errors in the stacking sequence and they are called intrinsic (or SF<1>), extrinsic (or SF<2>), or conservative (or SF<3>) [ 40 , 55 , 56 ].…”

Section: Resultsmentioning

confidence: 99%

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

et al. 2021

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In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics.

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“…where a is the lattice constant. 16 It is worth noting that several authors have also observed that a high density of SFs exist in regions of the material where grain boundary are found, 9 implying that a relationship between them exists. While it is known that an IDB can terminate a SF, 3 the details of the relationship between IDBs and SFs have not been studied for SiC, and even more interestingly the generation of SFs from IDB has never been reported in 3C-SiC.…”

Section: ■ Introductionmentioning

confidence: 97%

Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC

Zimbone

Barbagiovanni

Bongiorno

et al. 2020

Crystal Growth & Design

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Domain boundaries (DBs) generated during the growth of cubic silicon carbide (3C-SiC) on (001) Si and their interaction with stacking faults (SFs) were studied in this work. Direct scanning transmission electron microscopy (STEM) images show DBs are inverted domain boundaries (IDBs). The atomic arrangement of this IDB is different from the expected boundaries described in the literature; nevertheless, it has a highly coherent nature. The IDBs propagate in a complex way through the crystal forming “complex-IDBs” that interact strongly with SFs. In particular, we observed that IDBs can terminate and generate SFs. The presence of disconnections in the IDB could be responsible for this behavior. Some models are discussed in order to explain the interconnections between IDBs and SFs. Moreover, an ab initio Monte Carlo simulation was performed in order to shed light on the kinetics of the SFs–IDB interaction. We found that SF generation can be driven by surface instability during the growth of the crystal and that SFs can be terminated by IDBs.

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Atomic structure analysis of stacking faults and misfit dislocations at 3C-SiC/Si(0 0 1) interfaces by aberration-corrected transmission electron microscopy

Cited by 23 publications

References 27 publications

Restoring defect structures in 3C-SiC/Si (001) from spherical aberration-corrected high-resolution transmission electron microscope images by means of deconvolution processing

Restoring defect structures in 3C-SiC/Si (001) from spherical aberration-corrected high-resolution transmission electron microscope images by means of deconvolution processing

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC

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