Atomic vapor deposition of Ru and RuO2 thin film layers for electrode applications

Growth of Ru/RuO2 layers with atomic vapor deposition on plain wafers and into trench structures

“…As X-ray diffraction patterns show, Ru layers deposited with the diluted precursor are strongly textured and the grains in the film are predominantly orientated along the (002) plane [9]. Also a small fraction of residual RuO 2 -crystallites can be found on top of the Ru-layer.…”

Growth of Atomic Layer Deposited Ruthenium and Its Optical Properties at Short Wavelengths Using Ru(EtCp)2 and Oxygen

“…Kim et al report a density of ρ = 11.9 g•cm −3 by XRR investigations [10] although they used O 3 as a more reactive co-reactant. The highest Ru coating density of 12.7 g•cm −3 , achieved with an O 2 based ALD process, was reported by Manke et al [42] at temperatures of T dep = 450 • C. In addition to the density, a low surface roughness is also essential for high reflective properties in optical applications. We have determined a strong influence of the deposition temperature T dep on the film growth and thus the surface roughness.…”

Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks

“…HfO 2 (2 nm) was deposited on chemical SiO 2 or slant SiO 2 by atomic layer deposition (ALD) with an O 2 post-deposition anneal (PDA) applied afterwards. Ru was deposited by physical vapor deposition (PVD) or atomic vapor deposition (AVD Ò [6]). To study the distribution of oxygen in the stack after O 2 anneal, some samples were annealed in 18 2 min) and then analyzed with TOF-SIMS.…”