Atomistic structure of stacking faults in a commercial GaAs:Si wafer revealed by cross-sectional scanning tunneling microscopy

Subsurface Deformation Mechanism in Nano-cutting of Gallium Arsenide Using Molecular Dynamics Simulation

“…It can be observed that there exist three-coordination atoms placed periodically in the machined subsurface. Combined with the partial dislocations found under the groove bottom, the partial dislocations that are mainly emitted from the grain boundaries or free surfaces may cause the formation of stacking faults or twinning [ 22 , 23 ]. The stacking faults in the model are not completely dislocated atomic planes but several small areas in the boundary of single crystal and amorphous layer, therefore the partial dislocations exist at the boundaries of stacking faults.…”

Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc

“…In GaAs doping process, according to the dopant used, both n-type and p-type material can be realized. Silicon is an interesting dopant in GaAs since it acts as a donor or acceptor by occupying the gallium or arsenic site, respectively [11,12]. This amphoteric nature of silicon can expand the flexibility of the device applications [13,14].…”

Atomistic structure of Si atoms agglomerated nearby a stacking fault in a commercial GaAs:Si

“…3) It is believed that the SFs deactivate Si donors, since they are negatively charged [4]. On the other hand, it is suggested that the SFs in commercial GaAs:Si (with the Si concentration of the order of 10 18 cm −3 ), which are commonly used for commercial GaAs-based devices, do not exhibit such deactivation, since they are not charged [5]. It is also shown that some point defects coexist nearby the SFs [5], and the defects are speculated to be related to Si, even though the atomistic structure is not elucidated.…”

“…On the other hand, it is suggested that the SFs in commercial GaAs:Si (with the Si concentration of the order of 10 18 cm −3 ), which are commonly used for commercial GaAs-based devices, do not exhibit such deactivation, since they are not charged [5]. It is also shown that some point defects coexist nearby the SFs [5], and the defects are speculated to be related to Si, even though the atomistic structure is not elucidated. This paper shows that the defects include Si donors, agglomerated nearby SFs as theoretically expected [6,7], by means of cross-sectional scanning tunneling microscopy (XSTM).…”