Auger electron spectroscopy/x-ray photoelectron spectroscopy study of Ti–B–N thin films

Baker, M. A.; Steiner, Alexander; Haupt, J.; Gissler, W.

doi:10.1116/1.579743

Cited by 20 publications

(8 citation statements)

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“…By comparison, the free energy value of TiC is about À162 kJ/mol, and that of TiN is about À178 kJ/mol. On the other hand, although the cooling rate in sputtering is very fast, we believe, there is a good agreement between the phase composition experimentally obtained and that predicted by the phase diagram in Ti-C-N thin films, which has been clarified in Ti-B-N thin films by Baker et al [15,16]. Therefore, reaction (1) has a big negative Gibbs free energy, and can occur automatically, resulting in formation of TiN and C (see Fig.…”

Section: Discussionsupporting

confidence: 82%

Effect of N content on phase configuration, nanostructure and mechanical behaviors in Ti–Cx–Ny thin films

Lü

Wang

Shen

2009

Applied Surface Science

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Section: Discussionsupporting

confidence: 82%

Effect of N content on phase configuration, nanostructure and mechanical behaviors in Ti–Cx–Ny thin films

Lü

Wang

Shen

2009

Applied Surface Science

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“…For the B 1s spectrum in the case of the Ti on BF 2 ϩ -implanted polySi sample, a peak at 187.9 eV, which is associated with TiB 2 , was observed above 650°C. This is in agreement with the observation of Baker et al 44 The C 1s spectra contain only peaks associated with the C-C, C-H, and C-O bonds based on the published binding energy values. 19,45 F-C bonds ͓binding energy of 290 eV ͑Ref.…”

Section: B Bf 2 ¿ -Implanted Polysisupporting

confidence: 91%

X-ray photoemission spectroscopy study of silicidation of Ti on BF2+-implanted polysilicon

Chua

Pey

Wei

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Evaluation of fluorine-related species during Ti silicidation on BF2+-implanted polycrystalline silicon (polySi) under different temperatures has been studied using x-ray photoemission spectroscopy (XPS). The silicidation was carried out under sequential anneals from 500 to 700 °C with an interval of 50 °C in an ultrahigh vacuum (UHV) within the XPS chamber. The binding energy and peak intensity for Si 2p, Ti 2p, F 1s, O 1s, B 1s, and C 1s XPS peaks have been measured in the same XPS chamber immediately after the silicidation anneal without breaking the vacuum. The results show that fluorine from the BF2+ implantation is dissociated to form a mixture of SiFx (1⩽x⩽4) and TiFx (x=3,4) -like gaseous species at/near the TiSi2/polySi interface upon silicidation anneal. This can be characterized by the approximately 1.2 eV per Si–F bond chemical shift of the Si 2p core level, and the peak position for Ti 2p core levels with the resolved peaks at 465.1 eV corresponding to the Ti–F bond. The F 1s peaks further confirm the presence of SiFx and TiFx species. As the silicidation proceeds to higher temperatures, the intensity of these reaction species decreases due to their out-diffusion from the thin TiSi2 layer. These findings correlate well with the previously reported results on the void formation in sub-quarter-micron BF2+-implanted Ti-salicided polySi lines [H. N. Chua et al., J. Appl. Phys. 87, 8401 (2000)].

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“…22 TFA comprises principle component analysis to determine the number of unique components represented in the elemental emission from depth profile data and basis spectra selection to represent those factors. 22 TFA comprises principle component analysis to determine the number of unique components represented in the elemental emission from depth profile data and basis spectra selection to represent those factors.…”

Section: Electron Spectroscopy For Chemical Analysismentioning

confidence: 99%

“…[20][21][22] A long standing analytical model for Ga implantation extant in the literature serves as a frame for understanding the data. Electron spectroscopy for chemical analysis (ESCA) is well suited for this task since it is capable of measuring composition and chemistry as a function of depth.…”

Section: Introductionmentioning

confidence: 99%

Using electron spectroscopy to verify the model of Ga implanted during focused ion beam circuit editing

Niles

Spicer

Kee

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Formation of GaAs/AlGaAs constricted-channel field-effect transistor structures by focused Ga implantation and transport of electrons via focused ion beam induced localized statesMaskless sub-μ m patterning of silicon carbide using a focused ion beam in combination with wet chemical etching J.The authors use electron spectroscopy for chemical analysis to study the implantation of 50 keV Ga þ ions into electronic grade silicon, silicon oxide, silicon nitride, and silicon oxynitride typical of focused ion beam circuit editing work. The Ga þ dose naturally splits into low dose and high dose regimes with a transitional, median regime between the two. In the low dose regime (<10 16 cm À2 ), the amount of milled material is small ($10 nm) relative to typical layer thicknesses of circuits. A Gaussian implanting model with an implanting yield of $0.6 6 0.1, range of 43 6 9 nm, and straggle of 15 6 5 nm describe the data for all studied materials. The Ga atoms bind to the oxygen and nitrogen anions for oxides and nitrides, and silicon for elemental silicon. In the median regime (10 16 -10 17 cm À2 ), Ga accumulation and substrate defect formation alter a simple Gaussian model for Ga implantation although a steady state condition has not yet been reached. The high dose regime (>10 17 cm À2 ) entails a steady state condition where the implanted Ga assumes an error-function profile comprising a surface concentration as high as 50 at. % and a penetration depth of $60 nm. In the high dose regime, Ga implanted into nitride and oxide displays metallic valence (Ga 0 ) on the surface, gradually transitioning to nitride and oxide valence (Ga 3þ ) with depth.

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Auger electron spectroscopy/x-ray photoelectron spectroscopy study of Ti–B–N thin films

Cited by 20 publications

References 0 publications

Effect of N content on phase configuration, nanostructure and mechanical behaviors in Ti–Cx–Ny thin films

Effect of N content on phase configuration, nanostructure and mechanical behaviors in Ti–Cx–Ny thin films

X-ray photoemission spectroscopy study of silicidation of Ti on BF2+-implanted polysilicon

Using electron spectroscopy to verify the model of Ga implanted during focused ion beam circuit editing

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