The design of a narrow‐band cascoded CMOS inductive source‐degenerated low noise amplifier (LNA) for 866 MHz UHF RFID reader is presented. Compared to other previously reported narrow‐band LNA designs, in this work the finite gds (= 1/r0) effect has been considered to improve the nanometric design, achieving simultaneous impedance and minimum Fmin noise matching at a very low power drain of 850 μW from a 0.7‐V supply voltage. The LNA was fabricated using the IBM 130 nm CMOS process delivering a power gain (S21) of ≈12 dB, a reverse isolation (S12) of ≈−34 dB, and an input power reflection (S11@866 MHz) of ≈−12 dB. It had a minimum pass‐band NF of around 2.2 dB and a 3rd order input referred intercept point (IIP3) of ≈−9.5 dBm. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2780–2782, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25600