Automatic measurement of electron-beam diameter and astigmatism: BEAMETR

Babin, S.; Gaevski, Mikhail; Joy, David C.; Machin, M.; Martynov, A. I.

doi:10.1016/j.phpro.2008.07.085

Cited by 5 publications

(4 citation statements)

References 4 publications

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“…Although this process lays the groundwork for the approach described here, it is limited by differences in the contrast mechanism associated with the different modes of image formation, as well as some of the assumptions needed for the mathematical model. Babin et al (2008) developed a method for electron beam lithography applications, where intensity profiles of a 22 nm test pattern were imaged and measured to determine the beam size in two orthogonal directions. The resultant profiles could then be rotated and interpolated to create a two-dimensional beam distribution.…”

Section: Introductionmentioning

confidence: 99%

The Determination and Application of the Point Spread Function in the Scanning Electron Microscope

et al. 2018

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A method is presented to determine the spatial distribution of electrons in the focused beam of a scanning electron microscope (SEM). Knowledge of the electron distribution is valuable for characterizing and monitoring SEM performance, as well as for modeling and simulation in computational scanning electron microscopy. Specifically, it can be used to characterize astigmatism as well as study the relationship between beam energy, beam current, working distance, and beam shape and size. In addition, knowledge of the distribution of electrons in the beam can be utilized with deconvolution methods to improve the resolution and quality of backscattered, secondary, and transmitted electron images obtained with thermionic, FEG, or Schottky source instruments. The proposed method represents an improvement over previous methods for determining the spatial distribution of electrons in an SEM beam. Several practical applications are presented.

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Section: Introductionmentioning

confidence: 99%

The Determination and Application of the Point Spread Function in the Scanning Electron Microscope

et al. 2018

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“…This method is called rise-distance or sharp-edge (knife-edge) scan method and has been adopted historically from a profiling technique of focused electron beams [2]. For the electron beams this method turned out to be very successful and could even be automatized to determine the diameter and astigmatism [3]. Nevertheless, this method turned out to be unwieldy in the ion beam profiling.…”

Section: Introductionmentioning

confidence: 99%

Ion beam profiling from the interaction with a freestanding 2D layer

Shorubalko¹,

Choi²,

Stiefel³

et al. 2017

Beilstein J. Nanotechnol.

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Recent years have seen a great potential of the focused ion beam (FIB) technology for the nanometer-scale patterning of a freestanding two-dimensional (2D) layer. Experimentally determined sputtering yields of the perforation process can be quantitatively explained using the binary collision theory. The main peculiarity of the interaction between the ion beams and the suspended 2D material lies in the absence of collision cascades, featured by no interaction volume. Thus, the patterning resolution is directly set by the beam diameters. Here, we demonstrate pattern resolution beyond the beam size and precise profiling of the focused ion beams. We find out that FIB exposure time of individual pixels can influence the resultant pore diameter. In return, the pore dimension as a function of the exposure dose brings out the ion beam profiles. Using this method of determining an ion-beam point spread function, we verify a Gaussian profile of focused gallium ion beams. Graphene sputtering yield is extracted from the normalization of the measured Gaussian profiles, given a total beam current. Interestingly, profiling of unbeknown helium ion beams in this way results in asymmetry of the profile. Even triangular beam shapes are observed at certain helium FIB conditions, possibly attributable to the trimer nature of the beam source. Our method of profiling ion beams with 2D-layer perforation provides more information on ion beam profiles than the conventional sharp-edge scan method does.

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“…These data are analyzed to determine the beam size and they are compared with the simulated value. Diameters can also be measured by analyzing the secondary electron signal . Due to the lack of a transmission detector in our electron beam writer, we relied on the simulated data and compared them with the measured secondary electron signal.…”

mentioning

confidence: 99%

“…Diameters can also be measured by analyzing the secondary electron signal. 9 Due to the lack of a transmission detector in our electron beam writer, we relied on the simulated data and compared them with the measured secondary electron signal. Simulation data of the beam diameter (Figure 1a) for our customized Elionix ELS 7000 electron beam writer operating at 100 kV were obtained from Elionix Inc. (Japan).…”

mentioning

confidence: 99%

Patterning at the Resolution Limit of Commercial Electron Beam Lithography

et al. 2022

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It has been long known that low molecular weight resists can achieve a very high resolution, theoretically close to the probe diameter of the electron beam lithography (EBL) system. Despite technological improvements in EBL systems, the advances in resists have lagged behind. Here we demonstrate that a low-molecular-mass single-source precursor resist (based on cadmium(II) ethylxanthate complexed with pyridine) is capable of a achieving resolution (4 nm) that closely matches the measured probe diameter (∼3.8 nm). Energetic electrons enable the top-down radiolysis of the resist, while they provide the energy to construct the functional material from the bottom-upunit cell by unit cell. Since this occurs only within the volume of resist exposed to primary electrons, the minimum size of the patterned features is close to the beam diameter. We speculate that angstrom-scale patterning of functional materials is possible with single-source precursor resists using an aberration-corrected electron beam writer with a spot size of ∼1 Å.

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Automatic measurement of electron-beam diameter and astigmatism: BEAMETR

Cited by 5 publications

References 4 publications

The Determination and Application of the Point Spread Function in the Scanning Electron Microscope

The Determination and Application of the Point Spread Function in the Scanning Electron Microscope

Ion beam profiling from the interaction with a freestanding 2D layer

Patterning at the Resolution Limit of Commercial Electron Beam Lithography

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