Avalanche Multiplication in InAlAs

AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage

“…The smallest change is reported for x=0.6, in which C bd reduces from 20 to 3 mV/K when w reduces from 1 to 0.1µm. A small value of C bd in thin w was also observed in GaInP [6] (3.68mV/K for w = 0.2µm), InP [7] (6mV/K for w = 0.1µm) and InAlAs [7,8] (2.5mV/K for w = 0.13µm). These results suggest that a small C bd can be obtained in materials with large bandgap and in diodes with thin w. The dependence of C bd on w can be attributed to the reduced phonon scattering effects at high electric field in thin w leading to a weaker temperature dependence of avalanche gain (M).…”

“…(1) for InP and InAlAs diodes at temperature of 293 and 14K for ideal pin diodes with w = 80nm. The values of the bandgap in InP are taken from an empirical equation [7] and the band gaps at 293 and 14K for InAlAs were taken from Roura et al [14] while the values of σ T are 1.15 for InP [15] and 1.26 for InAlAs [16]. The results show that the tunneling current depends weakly on temperature in both materials, reducing by approximately an order of magnitude when the temperature reduces from 293 to 14K.…”

“…The temperature coefficients of breakdown voltage for different semiconductor materials, such as Si [2], GaAs [3], Al 0.6 Ga 0.4 As [5], GaInP [6], InP [7] and InAlAs [8] are plotted in Figure 5 and a comparison for diodes with w < 300nm is provided in Table II. It is clear that PIN1 with w = 80nm shows the smallest C bd than all materials with a range of w, except for the thinnest GaAs diode with w = 25nm.…”

1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature

“…This is shown in Fig. 4(b), along with the electric field profile at 26 V. The peak electric field in the InAlAs avalanche layer reaches 725 kV/cm at 30.5 V. Such fields were shown to cause significant tunneling current for a 200 nm InAlAs avalanche layer [18]. Hence the high DCR of our SPAD is attributed to excessive tunneling current from the InAlAs avalanche layer.…”

Avalanche Photodiodes in High-Speed Receiver Systems

“…The un-multiplied tunnelling current (Forrest et al, 1980b) defined by Equation (34) will use reported experimental InP (Tan et al, 2008) and InAlAs (Goh et al, 2007b) tunnelling fitting parameters. Since the tunnelling fitting parameters vary with avalanche width, the lowest value, 1.16 for InP and 1.26 for InAlAs, was used for all investigated avalanche widths to assume the worst case scenario.…”