Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor–liquid–solid grown GaAs nanowires

Zn-doping of GaAs nanowires grown by Aerotaxy

“…1(f) and (g)) is attributed to random growth initiation defects before the wire finds a fast-growing 〈111〉 B direction, and the slight tapering is due to radial growth [13]. Compared to in situ doping of epitaxially grown nanowires [16,18], we were able to grow Aerotaxy nanowires with a higher DEZn/TMGa concentration.…”

“…In 1992, Haraguchi et al first demonstrated GaAs pn junctions in nanowires using MOVPE [15]. Since then, only a few reports on in situ doping of GaAs nanowires have been published [16][17][18], and many fundamental questions concerning the doping mechanism still remain. For example, it is not well known how dopant atoms incorporate into the nanowires during the growth: via the metal particle [16] or by diffusion from the side facets [19].…”

“…For example, it is not well known how dopant atoms incorporate into the nanowires during the growth: via the metal particle [16] or by diffusion from the side facets [19]. Moreover, it is also difficult to realize a high dopant concentration in nanowires [18,20]. Nanowire growth from substrates in MOVPE usually requires a temperature of 400-500 1C for 10-20 min to grow 1 μm in length.…”

“…Also, some groups have reported that a high dopant concentration may cause seed splitting which hinders the nanowire nucleation [16,18,21].…”

Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodes

“…Since the axial growth rate was at least 1500 times higher than the radial growth rate, the typical nanowire diodes investigated here were practically non-tapered. More details about the growth and the structural properties of the nanowire pn-junctions can be found in the literature [23].…”