Backside-illuminated InAs1−xSbx-InAs narrow-band photodetectors

Abstract

High-performance backside-illuminated photodiodes have been fabricated for the first time from InAs1−xSbx-InAs heterostructures prepared by liquid-phase-epitaxy technique. The peak wavelength can be tuned compositionally from 3.1 to over 7.0 μm at 77 K. The half-width of the spectral responses as narrow as 1760 Å (at 4.0 μm) have been achieved. Internal quantum efficiencies of 90% and zero-bias-resistance–area products of 2×107 Ω cm2 have been obtained at 77 K.

Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors

“…2 A photoresponse up to 14 µm have been achieved for x = 0.77 at room temperature illustrating the possibility of LWIR operation. 3 Previous work have mostly focused on InAs1-xSbx with x ≈ 0.1 [4][5][6][7] or x > 0.85 8 since the lattice-mismatch to commercially available GaSb and InSb substrates, respectively, is small and therefore high quality planar layers can be achieved through epitaxial growth. However, to obtain a sufficiently narrow band gap to enable detection in the LWIR band, intermediate chemical compositions are required.…”

Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures

“…In addition, its unique band alignment with its ''$6.1 Å '' counterparts (i.e. AlSb, d ¼ 6.13 Å ; GaSb, d ¼ 6.09 Å ) demonstrates potential for the design of optoelectronic devices including photodetectors [1], resonant tunneling diodes [2], and vertical cavity surface emitting lasers (VCSEL) [3]. Initially, the lack of quality, lattice-matched semi-insulating substrates presented a major technical hurdle for synthesizing pure InAs layers that exhibit bulk-like properties.…”

Backside illuminated In(Ga)As/InAsSbP DH photodiodes for methane sensing at 3.3 μm

“…However, commonly used InAs substrate absorbs radiation of interest and, therefore, there have been no practical realizations of the BSI constructions sensitive to 3.3 µm radiation. The BSI photodiodes are known for the narrow band InAsSb devices grown onto InAs transparent for the light at λ>4 µm 9 . GaSb substrate is potentially transparent for the 3.3 µm radiation and thus can be also considered for the BSI device 10 .…”