Te precipitates in CdTe have been characterized by Auger spectroscopy, x-ray diffraction, and Raman spectroscopy. The x-ray results show that the precipitated Te in Bridgman-grown CeTe crystals has the same structural phase as observed in elemental Te under high pressure. Auger and Raman microprobe spectroscopy were carried out to confirm Te precipitates in CdTe and identify the symmetry of the Te precipitates.

This letter reports the achievement of a high-performance, broad-spectral-band infrared detector with the InAs1−xSbx alloy system using a backside-illuminated heterostructure approach. The basic structure of the detector is obtained with InAs1−xSbx grown by a liquid phase epitaxy technique on a GaSb substrate under lattice-matched or nearly lattice-matched conditions. The measured photoresponse covers the spectral range 1.7–4.2 μm with an external quantum efficiency of 65% without antireflective coating. The typical zero-bias resistance area product is in excess of 109 Ω cm2. The typical leakage current desity is less than 10−9 A/cm2 for 100 mV reverse bias. All parameters were measured at 77 K.

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