Band gap tuning in HgTe through uniaxial strains

Zhao, Huxian; Chen, Xiaoshuang; Lü, Jianping; Shu, Haibo; Lü, Wei

doi:10.1016/j.ssc.2013.04.013

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2014

2019

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(1 citation statement)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…HgTe can be grown epitaxially on CdTe due to the close match in lattice constants (0.3% mismatch). The tensile strain induced by this lattice mismatch is instrumental in bulk layers, where it lifts the degeneracy of the Γ 8 bands and opens a band gap [4][5][6] such that the toplogical insulator state can be accessed. 3 We showed, recently, that it is possible to grow CdTe-HgTe nanowire structures, 7 which are expected to show some residual strain.…”

Section: Introductionmentioning

confidence: 99%

Residual strain in free-standing CdTe nanowires overgrown with HgTe

Kessel

Lunczer

Tarakina

et al. 2019

Applied Physics Letters

View full text Add to dashboard Cite

We investigate the crystal properties of CdTe nanowires overgrown with HgTe. Scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) confirm, that the growth results in a high ensemble uniformity and that the individual heterostructures are single-crystalline, respectively. We use highresolution X-ray diffraction (HRXRD) to investigate strain, caused by the small lattice mismatch between the two materials. We find that both CdTe and HgTe show changes in lattice constant compared to the respective bulk lattice constants. The measurements reveal a complex strain pattern with signatures of both uniaxial and shear strains present in the overgrown nanowires.

show abstract