Residual strain in free-standing CdTe nanowires overgrown with HgTe

Kessel, Maximilian; Lunczer, Lukas; Tarakina, Nadezda V.; Brüne, C.; Buhmann, H.; Molenkamp, L. W.

doi:10.1063/1.5085174

Cited by 3 publications

(4 citation statements)

References 17 publications

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“…Figure 4 shows scanning electron micrographs of core-shell nanowires for (a) a triangular-and (b) a more circular-shaped ZnTe core. Both samples exhibit pronounced steplike side facets that have already been analyzed and reported for self-organized CdTe-HgTe core-shell nanowires [5,14] and are attributed to stable facets of the HgTe crystal. Another typical feature for HgTe nanowires with a triangular-shaped core is that the HgTe shell appears to not be homogeneously closed [cf.…”

Section: Nanowire Growth Investigationmentioning

confidence: 55%

“…This requires overgrowth of the ZnTe nanowires with a CdTe buffer layer. CdTe provides a lattice constant which induces the required strain in the subsequent epitaxially grown HgTe [14] to open a bulk band gap [15,16]. Due to the large lattice mismatch of 6.1% between ZnTe and CdTe [11], the CdTe shell is assumed to be fully relaxed after few nanometers.…”

Section: Nanowire Growth Investigationmentioning

confidence: 99%

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Selective area grown ZnTe nanowires as the basis for quasi-one-dimensional CdTe-HgTe multishell heterostructures

Hajer

Mantei

Kessel

et al. 2020

Phys. Rev. Materials

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Selective area growth is employed in the vapor-liquid-solid molecular beam epitaxy of ZnTe nanowire arrays. Full control over the location of the individual nanowires is achieved by defined positioning of the growth catalyst. This study addresses the influence of substrate material and growth temperature on the yield of vertical nanowires. The optimized procedure provides arrays of single-crystalline free-standing nanowires with a high ensemble uniformity. The nanowires exhibit a uniform shape with a diameter of about 80 nm and reach a length of more than 3 μm, which makes them suitable as substrates for core-shell nanowires of the topological insulator material HgTe.

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Section: Nanowire Growth Investigationmentioning

confidence: 55%

Section: Nanowire Growth Investigationmentioning

confidence: 99%

Selective area grown ZnTe nanowires as the basis for quasi-one-dimensional CdTe-HgTe multishell heterostructures

Hajer

Mantei

Kessel

et al. 2020

Phys. Rev. Materials

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“…The investigated heterostructures have a high crystal quality and show residual strain due to the lattice mismatch between HgTe and CdTe. 16 Strain lowers the symmetry of the zincblende unit cell and opens a bandgap in HgTe. 17 At low temperature, we expect the CdTe cores to be insu- lating.…”

mentioning

confidence: 99%

“…Further details regarding the growth process are discussed in ref . The investigated heterostructures have a high crystal quality and show residual strain due to the lattice mismatch between HgTe and CdTe . Strain lowers the symmetry of the zincblende unit cell and opens a band gap in HgTe .…”

mentioning

confidence: 99%

Proximity-Induced Superconductivity in CdTe–HgTe Core–Shell Nanowires

et al. 2019

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In this letter we report on proximity superconductivity induced in CdTe-HgTe coreshell nanowires, a quasi-one-dimensional heterostructure of the topological insulator HgTe. We demonstrate a Josephson supercurrent in our nanowires contacted with superconducting Al leads. The observation of a sizable I c R n product, a positive excess current and multiple Andreev reflections up to fourth order further indicate a high interface quality of the junctions.

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