Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Capiod, Pierre; Xu, Tao; Nys, J.P.; Berthe, Maxime; Patriarche, G.; Lymperakis, Liverios; Neugebauer, Jörg; Caroff, Philippe; Dunin-Borkowski, Rafal E.; Ebert, Ph.; Grandidier, B.

doi:10.1063/1.4821293

Cited by 28 publications

(30 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We mention that the Fermi level pinning on uncapped GaAs surfaces has been found to be different for the two polytypes [21], although in samples very similar to ours this seems not to be the case [22]. At an excitation power density of 10 −4 P 0 -10 −3 P 0 we start to observe state filling in the whole wire and this should correspond to a carrier density of about 10 18 cm −3 .…”

Section: Photoluminescence Experimentssupporting

confidence: 61%

Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

et al. 2014

View full text Add to dashboard Cite

We have investigated a large set of individual wurtzite/zinc-blende GaAs heterojunction nanowires using transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL). In several cases we have combined PL and TEM on the same wire. We find a fairly deep emission that shows a strong blueshift with increasing excitation power density. By using a variety of experiments we show that this emission is due to recombination across a heterojunction with a type II band alignment. The data give a valence band offset of about 100 meV, in excellent agreement with theoretical predictions. Spatially resolved CL data on heterojunction nanowires and PL data on pure wurtzite nanowires show that the band gap of wurtzite GaAs is very close to the band gap of zinc-blende GaAs.

show abstract

Section: Photoluminescence Experimentssupporting

confidence: 61%

Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

et al. 2014

View full text Add to dashboard Cite

show abstract

“…This resembles STM imagery on cleaved (110) III−V materials such as GaAs, InP, 59 GaSb, 60 and InSb(110). 30 On the basis of other III−V nanowires we have studied, 20 there should be no intrinsic Fermi level pinning at this cleaned surface, although such pinning has been observed by Capoid et al 61 on facets of zincblende and wurtzite GaAs due to the presence of surface steps.…”

mentioning

confidence: 92%

Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen

et al. 2015

View full text Add to dashboard Cite

We present a study of InAs/InSb heterostructured nanowires by X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and in-vacuum electrical measurements. Starting with pristine nanowires covered only by the native oxide formed through exposure to ambient air, we investigate the effect of atomic hydrogen cleaning on the surface chemistry and electrical performance. We find that clean and unreconstructed nanowire surfaces can be obtained simultaneously for both InSb and InAs by heating to 380 ± 20 °C under an H2 pressure 2 × 10(-6) mbar. Through electrical measurement of individual nanowires, we observe an increase in conductivity of 2 orders of magnitude by atomic hydrogen cleaning, which we relate through theoretical simulation to the contact-nanowire junction and nanowire surface Fermi level pinning. Our study demonstrates the significant potential of atomic hydrogen cleaning regarding device fabrication when high quality contacts or complete control of the surface structure is required. As hydrogen cleaning has recently been shown to work for many different types of III-V nanowires, our findings should be applicable far beyond the present materials system.

show abstract

“…These steps have electronic states in the band gap and act as extrinsic pinning centers [32][33][34]. Therefore, the Fermi energy is pinned at the InN surface and no tip-induced band bending occurs.…”

Section: B Electronic Propertiesmentioning

confidence: 99%

Intrinsic electronic properties of high-quality wurtzite InN

et al. 2016

Self Cite

View full text Add to dashboard Cite

Recent reports suggested that InN is a highly unusual III-V semiconductor, whose behavior fundamentally differs from that of others. We therefore analyzed its intrinsic electronic properties on the highest available quality InN layers, demonstrating the absence of electron accumulation at the (1010) cleavage surface and in the bulk. The bulk electron density is governed solely by dopants. Hence, we conclude that InN acts similarly to the other III-V semiconductors and previously reported intriguing effects are related to low crystallinity, surface decomposition, nonstoichiometry, and/or In adlayers.

show abstract

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Cited by 28 publications

References 41 publications

Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen

Intrinsic electronic properties of high-quality wurtzite InN

Contact Info

Product

Resources

About