Band offsets of La2O3 films on Ge substrates grown by radio frequency magnetron sputtering

Liu, Qiya; Fang, Zebo; Liu, Shiyan; Tan, Yongqiang; Chen, Jiajun

doi:10.1016/j.matlet.2013.10.077

Cited by 13 publications

(11 citation statements)

References 8 publications

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“…On the other hand, the sharp breakdown observed on the higher electric field is considered as hard breakdown, E 2 where the increase of instantaneous leakage current density is larger. Figure 7 elucidates the Ge 3d spectra of different oxidation/nitridation durations (5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) minutes. Ge 3d spectra comprise two broad peaks which incorporate Ge 0 and a mixture of various chemical bonding states of distinctive Ge sub-oxides.…”

Section: J-e Characteristicsmentioning

confidence: 99%

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

Onik

Hawari

Sabri

et al. 2021

Intl J of Energy Research

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The influence of different thermal oxidation/nitridation durations (5,10,15, and 20 minutes) at 400 C for transforming metallic Ho sputtered on Ge substrate in N 2 O gas ambient have been systemically investigated to develop Ho 2 O 3 /Ge based on metal-oxide-semiconductor (MOS) device. The structural and chemical properties of the film were characterized using X-ray diffraction spectroscopy, X-ray photoelectron spectroscopy (XPS), and high-resolution transmission electron microscopy. Cubic-Ho 2 O 3 dielectric layer has been formed along with sandwiched interfacial layer (IL) between substrate Ge and high-k interface comprising tetragonal-GeO 2 , GeO x , and cubic-Ge 3 N 4 compounds. Energy band alignment for Ho 2 O 3 /IL/Ge MOS stack has been determined from XPS spectrum where 10-minute sample exhibited maximum conduction band offset, ΔE c~2 .47 eV and valance band offset, ΔE v~4 .67 eV, inducing lower leakage current density, J~10 −5 A cm −2 at the higher electrical breakdown, E BD~8 .59 MV cm −1 . The electrical results of this sample also rev-

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Section: J-e Characteristicsmentioning

confidence: 99%

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

Onik

Hawari

Sabri

et al. 2021

Intl J of Energy Research

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“…As we know, the bandgap equals the energy distance between the photoemission peak centroid and the onset of the features due to single particle excitations, and it is usually obtained from the inelastic energy loss features observed on the high binding energy side of the core level photoemission peaks [30]. The onset of O 1s loss spectrum was determined by linearly extrapolating the segment of maximum negative slope to the back ground level [31]. The bandgaps of the as-grown 10 and 20 nm La 2 O 3 films are determined to be 5.55 and 5.45 eV, respectively.…”

Section: Resultsmentioning

confidence: 99%

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

et al. 2017

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La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La2O3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La2O3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La2O3. Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La2O3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

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“…In principle, the photoexcited electrons passing through dielectric films can suffer inelastic losses due to plasmon (collective oscillation) and single particle excitation (band-to-band transition excitation) [23]. It is proved that the band gap equals the energy distance between the photoemission peak centroid and the onset of the features due to single particle excitations, and it is usually obtained from the inelastic energy loss features observed on the high binding energy side of the core level photoemission peaks [24]. Besides, the onset of the O 1 s loss spectrum can be determined by linearly extrapolating the segment of maximum negative slope to the background level [25,26].…”

Section: Resultsmentioning

confidence: 99%

Impacts of the Oxygen Precursor on the Interfacial Properties of LaxAlyO Films Grown by Atomic Layer Deposition on Ge

et al. 2017

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Amorphous LaxAlyO films were grown on n-type Ge substrate by atomic layer deposition using O3 and H2O as oxidant, respectively. A comparison of the XPS results indicated that a thicker interfacial layer with the component of LaGeOx and GeOx was formed at O3-based LaxAlyO/Ge interface, causing lower band gap value as well as the conduction band offset (CBO) value relative to Ge substrate for O3-based LaxAlyO film, with a concomitant degeneration in the interfacial properties. In contrast, for the H2O-based film, the leakage current of more than one order of magnitude less than that of O3-based LaxAlyO film was obtained. All the results indicated that H2O is a more appropriate oxidant for improving the interfacial properties in the atomic-layer-deposited LaxAlyO dielectric on Ge.

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Band offsets of La2O3 films on Ge substrates grown by radio frequency magnetron sputtering

Cited by 13 publications

References 8 publications

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

Impacts of the Oxygen Precursor on the Interfacial Properties of LaxAlyO Films Grown by Atomic Layer Deposition on Ge

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