Band parameters of group III–V semiconductors in wurtzite structure

Ziembicki, Jakub; Scharoch, P.; Polak, Maciej P.; Wiśniewski, Michał; Kudrawiec, R.

doi:10.1063/5.0132109

Cited by 3 publications

(2 citation statements)

References 69 publications

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“…The two data points shown for the orthorhombic materials are the wurtzite-equivalent in-plane lattice parameters 𝑎√3 and b/2. Data were obtained from the following references: 6mm-BN [24][25][26], 6mm-AlN [18,[27][28][29], 6mm-GaN [26][27][28][29], 6mm-InN [26][27][28][29], 6mm-MnSnN2 [30], mm2-MgSiN2 [31][32][33][34][35][36], mm2-MgGeN2 [31,[33][34][35][36][37], mm2-MgSnN2 [17,33,34,[38][39][40], mm2-ZnSiN2 [21,23,[41][42][43][44], mm2-ZnGeN2 [21,23,41,42,44], mm2-ZnSnN2 [21,23,40,[44]…”

Section: Potential Of Functional Nitrides For Semiconductor Devicesmentioning

confidence: 99%

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Wostatek,

Chirala,

Stoddard

et al. 2024

Materials

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The state-of-the-art ammonothermal method for the growth of nitrides is reviewed here, with an emphasis on binary and ternary nitrides beyond GaN. A wide range of relevant aspects are covered, from fundamental autoclave technology, to reactivity and solubility of elements, to synthesized crystalline nitride materials and their properties. Initially, the potential of emerging and novel nitrides is discussed, motivating their synthesis in single crystal form. This is followed by a summary of our current understanding of the reactivity/solubility of species and the state-of-the-art single crystal synthesis for GaN, AlN, AlGaN, BN, InN, and, more generally, ternary and higher order nitrides. Investigation of the synthesized materials is presented, with a focus on point defects (impurities, native defects including hydrogenated vacancies) based on GaN and potential pathways for their mitigation or circumvention for achieving a wide range of controllable functional and structural material properties. Lastly, recent developments in autoclave technology are reviewed, based on GaN, with a focus on advances in development of in situ technologies, including in situ temperature measurements, optical absorption via UV/Vis spectroscopy, imaging of the solution and crystals via optical (visible, X-ray), along with use of X-ray computed tomography and diffraction. While time intensive to develop, these technologies are now capable of offering unprecedented insight into the autoclave and, hence, facilitating the rapid exploration of novel nitride synthesis using the ammonothermal method.

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Section: Potential Of Functional Nitrides For Semiconductor Devicesmentioning

confidence: 99%

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Wostatek,

Chirala,

Stoddard

et al. 2024

Materials

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“…The thin (In, Ga)N active layer contributes to high quantum efficiency, a pivotal feature for these applications.

, a ternary compound, exhibits outstanding traits—encompassing the solar spectrum (0.78 eV to 3.42 eV), high absorption, radiation resistance, thermal stability, and exceptional chemical robustness [ 19 , 20 ]. Moreover, the optical properties of InGaN/GaN systems under different internal and external conditions have been intensively investigated [ 21 , 22 , 23 , 24 , 25 , 26 ].…”

Section: Introductionmentioning

confidence: 99%

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Abboudi,

EL Ghazi,

En-nadir

et al. 2024

Nanomaterials

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This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adjusting compositions, and varying thickness. The built-in electric fields in (In, Ga)N alloys and heavy-hole levels are considered to enhance the results’ accuracy. The finite element method (FEM) and Python 3.8 are employed to numerically solve the Schrödinger equation within the effective mass theory framework. This study reveals that meticulous design can achieve a theoretical photovoltaic efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) that surpasses the Shockley–Queisser limit. Moreover, reducing the thickness of the layers enhances the light-absorbing capacity and, therefore, contributes to efficiency improvement. Additionally, the shape of the confinement potential significantly influences the device’s performance. This work is critical for society, as it represents a significant advancement in sustainable energy solutions, holding the promise of enhancing both the efficiency and accessibility of solar power generation. Consequently, this research stands at the forefront of innovation, offering a tangible and impactful contribution toward a greener and more sustainable energy future.

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Crystal and Electronic Structure of β‐Nb₂N Thin Films Grown by Molecular Beam Epitaxy

Yao,

Li,

Zhi

et al. 2024

Adv Funct Materials

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Niobium nitrides have garnered significant research interest since their discovery due to their exceptional properties and broad applications. In this study, NbNx thin films are successfully grown on 4H(6H)‐SiC(001) substrates using nitrogen‐assisted molecular beam epitaxy. Through scanning transmission electron microscopy and X‐ray diffraction, it is confirmed that the crystal structure of the thin films corresponds to the β‐Nb2N. Different from the previously reported structure of the βA phase (P63/mmc) of β‐Nb2N, the results clearly match with the βB phase (). Resistivity measurements reveal that β‐Nb2N exhibits superconductivity at ≈10 K with an upper critical field of ≈5 T. Its 3D electronic structure is further elucidated using angle‐resolved photoemission spectroscopy combined with theoretical calculations. The observed superconductivity in β‐Nb2N is attributed to its relatively high electron–phonon coupling strength and density of states at Fermi level. Interestingly, it is found that the sample is close to a Lifshitz transition, suggesting potential for tunable physical properties. The results provide a comprehensive understanding of the crystal and electronic structures of β‐Nb2N, facilitating its future applications.

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Band parameters of group III–V semiconductors in wurtzite structure

Cited by 3 publications

References 69 publications

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Crystal and Electronic Structure of β‐Nb₂N Thin Films Grown by Molecular Beam Epitaxy

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Band parameters of group III–V semiconductors in wurtzite structure

Cited by 3 publications

References 69 publications

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Crystal and Electronic Structure of β‐Nb2N Thin Films Grown by Molecular Beam Epitaxy

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Crystal and Electronic Structure of β‐Nb₂N Thin Films Grown by Molecular Beam Epitaxy