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Skierbiszewski, C.; Perlin, P.; Wiśniewski, P.; Suski, T.; Geisz, John F.; Hingerl, Kurt; Jantsch, W.; Mars, D. E.; Walukiewicz, W.

doi:10.1103/physrevb.65.035207

Cited by 67 publications

(34 citation statements)

References 47 publications

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“…It is clearly seen that with increase of nitrogen doping the fundamental edge moves down to lower energies. This reflects the effect of the nitrogen-caused band gap reduction, and agrees well with experimental observations [7,24]. We also notice that the E 2 peak hardly moves with increase of the nitrogen contents, while the E 1 transition moves slightly to higher energies.…”

supporting

confidence: 79%

“…Another striking feature of this system is the appearance of a new composition-dependent optical transition, called E + , detected by electro-reflectance measurements for the samples with nitrogen concentrations of ≥0.8% [3,4]. This peak is located at about 0.4-0.8 eV above the conduction band (CB) minimum (denoted as E − ) and shifts upward in energy with increase of nitrogen concentration [3,4,5].Several physical mechanisms have been proposed to describe these nitrogen-induced changes : two-level band anticrossing (BAC) model [6,7], disorder-allowed Γ-X-L coupling [8,9], and the formation of the impurity band [10]. In the frames of the BAC model the E + state naturally appears as the high-energy solution of a two-state Hamiltonian, describing the interaction of the localized nitrogen state with the extended CB states of the host matrix compound [11].…”

mentioning

confidence: 99%

“…Several physical mechanisms have been proposed to describe these nitrogen-induced changes : two-level band anticrossing (BAC) model [6,7], disorder-allowed Γ-X-L coupling [8,9], and the formation of the impurity band [10]. In the frames of the BAC model the E + state naturally appears as the high-energy solution of a two-state Hamiltonian, describing the interaction of the localized nitrogen state with the extended CB states of the host matrix compound [11].…”

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confidence: 99%

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Experimental and theoretical studies of theE+optical transition inGaAsNalloys

et al. 2006

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Optical properties of GaAsN system with nitrogen concentrations in the range of 0.9-3.7% are studied by full-potential LAPW method in a supercell approach. The E+ transition is identified by calculating the imaginary part of the dielectric function. The evolution of the energy of this transition with nitrogen concentration is studied and the origin of this transition is identified by analyzing the contributions to the dielectric function from different band combinations. The L1c-derived states are shown to play an important role in the formation of the E+ transition, which was also suggested by recent experiments. At the same time the nitrogen-induced modification of the first conduction band of the host compound are also found to contribute significantly to the E+ transition. Further, the study of several model supercells demonstrated the significant influence of the nitrogen potential on the optical properties of the GaAsN system. GaAs 1−x N x alloys have attracted much attention of both experimentalists and theoreticians due to their unusual physical properties. Among those features, observed in the typical nitrogen concentration regime of 0.5%-3.0%, one should mention the anomalous band gap reduction, which makes this system technologically important for such electronic devices as infrared diode lasers [1] and multijunction solar cells [2]. Another striking feature of this system is the appearance of a new composition-dependent optical transition, called E + , detected by electro-reflectance measurements for the samples with nitrogen concentrations of ≥0.8% [3,4]. This peak is located at about 0.4-0.8 eV above the conduction band (CB) minimum (denoted as E − ) and shifts upward in energy with increase of nitrogen concentration [3,4,5].Several physical mechanisms have been proposed to describe these nitrogen-induced changes : two-level band anticrossing (BAC) model [6,7], disorder-allowed Γ-X-L coupling [8,9], and the formation of the impurity band [10]. In the frames of the BAC model the E + state naturally appears as the high-energy solution of a two-state Hamiltonian, describing the interaction of the localized nitrogen state with the extended CB states of the host matrix compound [11]. However, the firstprinciples [8,12,13,14] as well as empirical pseudopotential [9,15,16] calculations failed to validate the BAC model. On the other hand, based on these calculations, the intraband coupling model has been proposed. In this model the E + peak is caused by a disorder-allowed transition from the valence band (VB) maximum to the Lpoint of the conduction band. In particular, it was proposed that the energy position of the E + transition is a configuration-weighted average of a nitrogen impurity state and CB L-state, denoted as L 1c [9]. However, to our knowledge, there are no studies of the GaAsN system, which identify and clarify the origin of the E + transition based on direct first-principles calculations of the optical properties of this system.In this Letter we report the results of theoretical study of the...

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confidence: 79%

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confidence: 99%

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Experimental and theoretical studies of theE+optical transition inGaAsNalloys

et al. 2006

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“…(4), one expects an increase of the electron effective mass with increasing Fermi energy and thus also with increasing doping level. This prediction has been fully conÿrmed by experiments [42,54]. Fig.…”

Section: Comparison With Experimentsmentioning

confidence: 53%

Narrow band gap group III-nitride alloys

Walukiewicz

2004

Physica E: Low-dimensional Systems and Nanostructures

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Recent results on the properties of narrow gap group III-nitrides and their alloys are reviewed. It is shown that InN with the energy gap of 0:7 eV exhibits classical characteristics of a narrow gap semiconductor with strongly nonparabolic conduction band and an energy dependent electron e ective mass. With the new discovery, the direct band gaps of the group III-nitride alloys span an extremely wide energy range from near infrared in InN to deep ultraviolet in AlN o ering possibilities for new device applications of these materials. We also discuss properties of dilute group III-N-V alloys in which incorporation of a small amount of nitrogen results in a dramatic band gap reduction. All the unusual properties of the alloys are well described by a band anticrossing model that considers an interaction between localized nitrogen states and the extended states of the conduction band. ?

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“…It has been demonstrated that an addition of nitrogen to GaAs or GaInAs changes essentially the conduction band (CB) structure leading to several unexpected effects: l reduction of the band gap energy as large as 60 meV for 0.25% of N in InGaNAs, l nitrogen induced splitting of the CB (to the E _ and the E + bands), l drastic increase in the CB electron effective mass and a giant nonparabolicity of the CB [4][5][6][7]. It has been shown that GaN and GaAs have many differ− ent lattice constants, which mean that GaAsN layers grown on a GaAs substrate should be highly strained.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy

Gholami

Esmaeili

Haratizadeh

et al. 2009

Opto-Electronics Review

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We have investigated optical properties of Ga0.64In0.36N0.006As0.994/GaAs single quantum-well structures using photoluminescence technique. We have found that nitrogen creates potential fluctuations in the InGaNAs structures, so it is the cause of trap centres in these structures and leads to localized excitons recombination dynamics. The near-band edge PL at 2 K exhibited a blueshift with an increase in excitation intensity of a sample but there is not such a shift in the PL peak position energy of same sample at 150 K. It has been found that PL spectra have a large full width at half maximum (FWHM) value at 2 K. These results are discussed in terms of carrier localization. Additionally, our results suggest decreasing PL integrated intensity in this structure, possibly due to non-radiative recombination. It has been shown that thermal annealing reduces the local strain created by nitrogen. By annealing process, a blue shifted emission can be observed.

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Band structure and optical properties ofInyGa1−yAs

Cited by 67 publications

References 47 publications

Experimental and theoretical studies of theE+optical transition inGaAsNalloys

Experimental and theoretical studies of theE+optical transition inGaAsNalloys

Narrow band gap group III-nitride alloys

Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy

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