Narrow band gap group III-nitride alloys

Walukiewicz, W.

doi:10.1016/j.physe.2003.08.023

Cited by 28 publications

(20 citation statements)

References 49 publications

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“…The resulting optical band gap can be very well explained assuming a non-parabolic conduction band [8]. The low energy gap is further supported by the observed strong dependence of the electron effective mass on the electron concentration [6][7][8]. This is a consequence of a repulsive interaction between the closely energetically spaced conduction and valence band.…”

Section: Wladek Walukiewiczmentioning

confidence: 67%

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Report on the evening rump session on InN – July 21, 2004 at the 2004 International Workshop on Nitride Semiconductors

Trager-Cowan

2005

phys. stat. sol. (c)

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The following is a report on the Evening Rump Session on InN held as part of the 2004 International Workshop on Nitride Semiconductors. It summarises (1) the presentations given by the 5 panellists covering data generated from theory and a wide range of experimental techniques relating to the properties of InN, in particular its bandgap and (2) the subsequent discussion. The most recent parameter-free electronic-structure calculations predict a value for the InN bandgap of 0.8±0.4 eV; experimental results obtained from a wide range of InN samples point to a bandgap around 0.7 eV, or to a bandgap around 1.3 eV. The interpretation of available data is hotly contested, not surprisingly a definitive conclusion on the true value of the bandgap of InN was not reached during the Rump Session. It was agreed that InN is a difficult material to grow and its properties vary depending on how and where it is grown. However with mobilities of order 4000 cm 2 /Vs, high saturation velocities and the absorption wavelengths of InGaN spanning the visible, InN is a material with huge potential.

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Section: Wladek Walukiewiczmentioning

confidence: 67%

“…He argued that the low energy gap of InN (≈ 0.7 eV) is supported by a broad range of experiments [6,7]. He first presented absorption and photoluminescence spectra where the absorption edge is observed close to 0.7 eV with a strong luminescence band also observed at this energy.…”

Section: Wladek Walukiewiczmentioning

confidence: 96%

Report on the evening rump session on InN – July 21, 2004 at the 2004 International Workshop on Nitride Semiconductors

Trager-Cowan

2005

phys. stat. sol. (c)

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“…Silicon carbide (SiC), a column-IV-based compound semiconductor that can crystallize in the form of many polytypes [39], 2 was one of the first wide energy gap semiconductors to acquire the material quality demanded of commercial and military device applications, and novel devices fabricated from this material continue to be devised and fabricated today [5,30,. 3 Later, interest in the wide energy gap semiconductors broadened to include the family of III-V nitride semiconductors, gallium nitride (GaN), aluminum nitride (AlN), and indium nitride (InN) [71][72][73][74][75], 4 and their alloys [31,51,57,. 5 Most recently, zinc oxide (ZnO), a II-VI wide energy gap semiconductor, has also become a focus of the wide energy gap semiconductor community [86,88,91,[127][128][129][130][131][132][133][134][135][136].…”

Section: Introductionmentioning

confidence: 99%

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. In an effort to provide some perspective on this rapidly evolving and burgeoning field of research, we review analyzes of the electron transport within some wide energy gap semiconductors of current interest in this paper. In order to narrow the scope of this review, we will primarily focus on the electron transport that occurs within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide in this review, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor in of itself, is included as it is often alloyed with other wide energy gap semiconductors, the resultant alloys being wide energy gap semiconductors themselves. The electron transport that occurs within zinc-blende gallium arsenide is also considered, albeit primarily for bench-marking purposes. Most of our discussion will focus on results obtained from our ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials, our results conforming with state-of-the-art wide energy gap semiconductor orthodoxy. A brief tutorial on the Monte Carlo electron transport simulation approach, this approach being used to generate the results presented herein, is also provided. Steady-state and transient electron transport results are presented. The evolution of the field, and a survey of the current literature, are also featured. We conclude our review by presenting some recent developments on the electron transport within these materials.

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“…Among the group III-N semiconductors, InN is a key material for optical and hightemperature device applications. It is reported that InN with a bandgap energy (0.64 eV) [2] shows unusual physical properties, anisotropic critical field [3], unique transport and optical properties [4]. This results from the large built-in electric field which arises from strain associated with these lattice mismatched hexagonal (wurtzite-W) III-nitride structures.…”

Section: Introductionmentioning

confidence: 99%

Effect of doping and in-composition on gain of long wavelength III-nitride QDs

Jbara

Abood²,

Al-Khursan³

2012

J Opt

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Abstract:In this work, we calculate material gain for long wavelength IIInitride InN and AlInN quantum dot (QD) structures. Strain and QD inhomogeneity are included in the calculations. The study covers (800-2300 nm) wavelength range which is important in optical communications. While p-doping is shown to be efficient to increasing gain, changing QD size (especially QD radius) is more efficient to vary wavelength. The results predicted that n-doped QD structures are promises for broad band laser applications.

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Narrow band gap group III-nitride alloys

Cited by 28 publications

References 49 publications

Report on the evening rump session on InN – July 21, 2004 at the 2004 International Workshop on Nitride Semiconductors

Report on the evening rump session on InN – July 21, 2004 at the 2004 International Workshop on Nitride Semiconductors

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Effect of doping and in-composition on gain of long wavelength III-nitride QDs

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