Band Structure of HgTe

Piotrzkowski, R.; Porowski, S.; Dziuba, Z.; Ginter, J.; Giriat, W.; Sosnowski, L.

doi:10.1002/pssb.19650080333

Cited by 68 publications

(12 citation statements)

References 3 publications

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“…The long period of uncertainly regarding the band structure of grey tin ended quite abruptly with the Groves-Paul zero-gap model reported in 1963 [7,8]. Experimental evidence for this model was published by Polish workers in 1965 [9]. It should be mentioned that the first HgCdTe PEM detector operated in long wavelength IR (LWIR) spectral range was demonstrated in 1963 by Giriat and Grynberg [10].…”

Section: Polish Perspectivementioning

confidence: 93%

HgTe-based photodetectors in Poland

Rogalski

2009

SPIE Proceedings

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The purpose of this paper is to review the main achievements in the investigations of HgTe-based ternary alloys and point out the Polish contributions in development of the middle and long wavelength infrared photodetectors. Research and development efforts in Poland were concentrated mostly on uncooled market niche.At the beginning, a modified isothermal vapor phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic, and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapor phase deposition.At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics.In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

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Section: Polish Perspectivementioning

confidence: 93%

HgTe-based photodetectors in Poland

Rogalski

2009

SPIE Proceedings

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“…Experimental evidence for this model in HgTe was published in 1965 [18] and in 1970 [19] for HgSe. The GP model, applied for CdHgTe, predicts existence of triple degeneracy of conduction, light and heavy holes bands.…”

Section: Original Papermentioning

confidence: 93%

II–VI compounds – Polish perspective

Gałązka

2006

Physica Status Solidi (b)

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The purpose of this lecture is to review the main achievements of the investigations of II -VI compounds and point out Polish contributions to this part of solid state physics. Because the Polish physicists were particularly active in the area of narrow gap semiconductors as well as in the area of semimagnetic semiconductors producing several pioneering papers in this field, special attention will be paid to the narrow gap mercury-based semiconductor alloys and to the II -VI semimagnetic semiconductors, both narrow and wide gap. Some problems connected with material processing, the most influential experimental results as well as theoretical ideas will be presented. Because the history of II -VI compounds lasts for many decades (also in Poland), only selected achievements will be reviewed. The lecture will concentrate mostly on the properties of bulk crystals; low-dimensional structures and other current and hot problems of II -VI compounds will be only mentioned.

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“…The best fit of the experimental data with the theoretical formulae (2) was obtained for the parameters summarized in Table 1. As the mobility of the heavy electrons p,, and holes pp is too low, it was not possible to estimate all parameters contained in formulae (2). From Table 1 it is seen that only the contribution of the light electrons t o the conductivity is estimated exactly.…”

Section: Ismentioning

confidence: 97%

Galvanomagnetic Properties of Zn_xHg_1−xTe Solid Solutions

Niculescu

Dziuba

1969

Physica Status Solidi (b)

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An investigation is made of the electrical conductivity and the Hall coefficient of Zn,Hgl -,Te system with z = 0 and 2=0.2 as a function of the temperature and magnetic field in the ranges 77 to 400 "K and 250 to 10000 Gs, respectively. An effect of the "heavy carriers" on the galvanomagnetic properties is found. The additional conductivity due to these "carriers" has a temperature independent value. The energy gap for HgTe is estimated to E , = -0.27 eV and E, = -0.16 e?' at the temperatures 77 and 300 "K, respectively.La conductivite klectrique et le coefficient de Hall du systhme Zn,Hgl -,Te avec z = 0 et z = 0,2 ont Btk Btudiks en fonction de la temperature e t du champ magnktique, dans les domaines de 77 i 400°K et de 250 i 10000 Gs. L'effet des ,,portems lourds" sur les propribt6s galvanomagn6tiques a 6tB trouv6. La conductivit6 additionnelle donnee par ces ,,porteurs" a une valeur constante avec la temperature. La bande interdite pour HgTe a B t Bestimke: E, = -0,27 eV et E , = -0,16 eV iL 77 e t 300 "K respectivement.

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Band Structure of HgTe

Cited by 68 publications

References 3 publications

HgTe-based photodetectors in Poland

HgTe-based photodetectors in Poland

II–VI compounds – Polish perspective

Galvanomagnetic Properties of Zn_xHg_1−xTe Solid Solutions

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Band Structure of HgTe

Cited by 68 publications

References 3 publications

HgTe-based photodetectors in Poland

HgTe-based photodetectors in Poland

II–VI compounds – Polish perspective

Galvanomagnetic Properties of ZnxHg1−xTe Solid Solutions

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Galvanomagnetic Properties of Zn_xHg_1−xTe Solid Solutions