Bandgap engineering by substitution of S by Se in nanostructured ZnS1−xSex thin films grown by soft chemical route for nontoxic optoelectronic device applications

Sadekar, Harishchandra K.; Ghule, Anil V.; Sharma, Ramphal

doi:10.1016/j.jallcom.2011.02.089

Cited by 35 publications

(30 citation statements)

References 34 publications

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“…For GaP, this value is 0.542 nm, 31 and for ZnSeS, it varies with the Se/S ratio (see SI, Figure S6; for example, Se/S = 4 gives 0.557 nm). 13,32 …”

Section: Experimental Methodsmentioning

confidence: 99%

Ga for Zn Cation Exchange Allows for Highly Luminescent and Photostable InZnP-Based Quantum Dots

et al. 2017

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In this work, we demonstrate that a preferential Ga-for-Zn cation exchange is responsible for the increase in photoluminescence that is observed when gallium oleate is added to InZnP alloy QDs. By exposing InZnP QDs with varying Zn/In ratios to gallium oleate and monitoring their optical properties, composition, and size, we conclude that Ga3+ preferentially replaces Zn2+, leading to the formation of InZnP/InGaP core/graded-shell QDs. This cation exchange reaction results in a large increase of the QD photoluminescence, but only for InZnP QDs with Zn/In ≥ 0.5. For InP QDs that do not contain zinc, Ga is most likely incorporated only on the quantum dot surface, and a PL enhancement is not observed. After further growth of a GaP shell and a lattice-matched ZnSeS outer shell, the cation-exchanged InZnP/InGaP QDs continue to exhibit superior PL QY (over 70%) and stability under long-term illumination (840 h, 5 weeks) compared to InZnP cores with the same shells. These results provide important mechanistic insights into recent improvements in InP-based QDs for luminescent applications.

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“…For GaP, this value is 0.542 nm, 31 and for ZnSeS, it varies with the Se/S ratio (see SI, Figure S6; for example, Se/S = 4 gives 0.557 nm). 13,32 …”

Section: Experimental Methodsmentioning

confidence: 99%

Ga for Zn Cation Exchange Allows for Highly Luminescent and Photostable InZnP-Based Quantum Dots

et al. 2017

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“…Until now, a wide range of characterization studies of the ZnSSe thin films have been reported, including structural, electrical and optical properties variations in dependence of the S/Se ratio. 2,5,7,[10][11][12][13][14][15][16] Raman spectroscopy as such has been extensively used for investigating the lattice vibration dynamics in these systems. 12,14,17,18 Raman scattering is a powerful non-destructive method which can provide useful information on the structure, morphology and chemical composition of semiconductor materials, as well as on the photon-electron and electron-phonon interactions occurring in these materials.…”

Section: Introductionmentioning

confidence: 99%

Resonant Raman scattering of ZnS_xSe_1−x solid solutions: the role of S and Se electronic states

Dimitrievska

Xie

Jackson

et al. 2016

Phys. Chem. Chem. Phys.

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A comprehensive Raman resonance scattering study of ZnSxSe1-x (ZnSSe) solid solutions over the whole compositional range (0 ≤ x ≤ 1) has been carried out using 325 and 455 nm excitation wavelengths. The Raman scattering intensities of LO ZnS-like and ZnSe-like phonon modes, corresponding to pure S and Se vibrations, respectively, are revealed to be significantly enhanced when excited with 325 nm excitation in the case of S vibrations, and with 455 nm in the case of Se vibrations. This behavior is explained by the interaction of the excitation photons with the corresponding S or Se electronic states in the conduction band, and further confirmed by first principles simulations. These findings advance the fundamental understanding of the coupling between the electronic transitions and photons in the case of Raman resonance effects, and provide inputs for further studies of lattice dynamics, especially in the case of chalcogenide materials. Additionally, the coexistence of modes corresponding to only S vibrations and only Se vibrations in the ZnSSe alloys makes these results applicable for the compositional assessment of ZnSSe compounds.

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“…This problem has stimulated research into developing a Cd-free buffer layer. Different buffer layers, such as ZnS, In 2 S 3 , ZnSe, Zn(S x ,Se 1−x ), SnS, and Zn x In 1−x Se, have been examined, and their effect on the solar cell efficiency has been investigated [7,9,11,12]. Unfortunately, the efficiencies of Cd-free CIGS-based thin film solar cells fabricated from these materials are not as high as those fabricated from CBD-CdS buffer layers [4].…”

Section: Introductionmentioning

confidence: 99%

Preparation and characteristics of chemical bath deposited ZnS thin films: Effects of different complexing agents

Shin

Agawane

Gang

et al. 2012

Journal of Alloys and Compounds

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Bandgap engineering by substitution of S by Se in nanostructured ZnS1−xSex thin films grown by soft chemical route for nontoxic optoelectronic device applications

Cited by 35 publications

References 34 publications

Ga for Zn Cation Exchange Allows for Highly Luminescent and Photostable InZnP-Based Quantum Dots

Ga for Zn Cation Exchange Allows for Highly Luminescent and Photostable InZnP-Based Quantum Dots

Resonant Raman scattering of ZnS_xSe_1−x solid solutions: the role of S and Se electronic states

Preparation and characteristics of chemical bath deposited ZnS thin films: Effects of different complexing agents

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Bandgap engineering by substitution of S by Se in nanostructured ZnS1−xSex thin films grown by soft chemical route for nontoxic optoelectronic device applications

Cited by 35 publications

References 34 publications

Ga for Zn Cation Exchange Allows for Highly Luminescent and Photostable InZnP-Based Quantum Dots

Ga for Zn Cation Exchange Allows for Highly Luminescent and Photostable InZnP-Based Quantum Dots

Resonant Raman scattering of ZnSxSe1−x solid solutions: the role of S and Se electronic states

Preparation and characteristics of chemical bath deposited ZnS thin films: Effects of different complexing agents

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Resonant Raman scattering of ZnS_xSe_1−x solid solutions: the role of S and Se electronic states