2007
DOI: 10.1017/s1431927607075411
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Bandgap Measurement of Dielectric Thin Films by Using Monochromated STEM-EELS

Abstract: The bandgap measurement of thin dielectric films is essential for flash memory devices because an improvement of device reliability has been attained by band-gap engineering of the dielectric nitride and oxide layer [1]. Recently as electron monochromators have been attached to transmission electron microscopes (TEM), high-resolution electron energy-loss spectroscopy (EELS) in TEM has been a powerful tool for bandgap measurements in nano-scale. However, the determination of exact bandgaps in TEM-EELS is still … Show more

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Cited by 19 publications
(24 citation statements)
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“…Determination of optical absorption in thin layers by other optical methods, such as spectroscopic ellipsometry, is strongly influenced by the choice of the absorption model used to simulate the spectra resulting in significant uncertainty in the inferred onset of the intrinsic optical absorption. It is also possible to evaluate the insulator bandgap value from the electron energy loss spectra [32][33][34][35][36]; however, the need to subtract the zero-loss peak in order to recover the single-electron loss function faces a number of problems which impair accuracy of this technique. Worth adding here is that the frequently applied linear fit of the loss function is inconsistent with physics of electron energy loss through excitation of direct or indirect transitions in a solid [33] and cannot be considered as a valid procedure of threshold determination.…”
Section: Band Offsets Determination Using Spectroscopy Of Internal Phmentioning
confidence: 99%
“…Determination of optical absorption in thin layers by other optical methods, such as spectroscopic ellipsometry, is strongly influenced by the choice of the absorption model used to simulate the spectra resulting in significant uncertainty in the inferred onset of the intrinsic optical absorption. It is also possible to evaluate the insulator bandgap value from the electron energy loss spectra [32][33][34][35][36]; however, the need to subtract the zero-loss peak in order to recover the single-electron loss function faces a number of problems which impair accuracy of this technique. Worth adding here is that the frequently applied linear fit of the loss function is inconsistent with physics of electron energy loss through excitation of direct or indirect transitions in a solid [33] and cannot be considered as a valid procedure of threshold determination.…”
Section: Band Offsets Determination Using Spectroscopy Of Internal Phmentioning
confidence: 99%
“…Before discussing Figure , the question of whether or not the bandgap shifts shown in that figure are to be explained only (or mostly) through the strain state of the layer should be taken into account, because the bandgap energy value is sensitive to many effects, and also different artefacts may modify the VEELS signal. Once the inelastic interactions have been eliminated with the monochromator, the main source of such artefacts on the bandgap measurements is the Cerenkov radiation (Gu et al ., ; Park et al ., ). However, the bandgap shift because of this radiation is minimized if the spectra are acquired at regions of the sample thin enough (Gu et al ., ; Keller et al ., ) being this the case, because these thicknesses of the sample preparations studied are not higher than 50 nm.…”
Section: Resultsmentioning
confidence: 97%
“…Therefore, the effect of light under positive gate bias stress could be ignored. gap of SiN x could vary with composition of Si and N [8], absorption of light could occur at SiN x gate insulator. The energy band diagram for negative gate bias stress under 300 nm light illumination is also shown in Figure 5 (a).…”
Section: Discussionmentioning
confidence: 99%