Basic Characteristics of a Simultaneous Double-Side CMP Machine, Housed in a Sealed, Pressure-Resistant Container

Kitamura, Kazuhiro; Doi, Toshiro; Kurokawa, Syuhei; Umezaki, Yoji; Matsukawa, Yoji; Ooki, Yota; Hasegawa, Tadashi; Koshiyama, Isamu; Ichikawa, Koichiro; Nakamura, Yoshio

doi:10.4028/www.scientific.net/kem.447-448.61

Cited by 9 publications

(4 citation statements)

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“…As the enhancement effect on the SiC-CMP removal rate by H 2 O 2 additive was not so large, super strong oxidizer KMnO 4 (Potassium Permanganate) was introduced and the effect was investigated [9][10][11]. The results clearly indicate that the strong oxidizer KMnO 4 has a significant effect on increasing CMP processing rate, which can be improved drastically.…”

Section: Effect Of Oxidizer On Removal Rates Of Si-facementioning

confidence: 98%

Characteristics in SiC-CMP using MnO₂ slurry with Strong Oxidant under Different Atmospheric Conditions

et al. 2013

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Semiconductor technology is the key point of the information society. However, as technology developing, the traditional semiconductor material such as silicon (Si) could not meet the demand of the society. Therefore, the next generation semiconductor material silicon carbide (SiC) is widely concerned. Compared to Si, SiC has some superior physical and chemical properties. On the other hand, it is difficult to polish SiC wafers due to the chemical, mechanical, and thermal stability. To achieve high-efficient CMP processing of SiC substrates, oxygen gas was introduced which might increase removal rates. MnO 2 slurry was selected instead of silica slurry and strong oxidant KMnO 4 was used to improve SiC-CMP process as an additive. In this paper, the effect of oxidant was inspected first. Meanwhile, we carried out the CMP experiment with the new type CMP machine to control the processing atmospheres including types of gases and gas pressures. As conclusions, oxygen and high atmospheric pressure can increase the removal rate in MnO 2 slurry. KMnO 4 additive has a great effect on increase of the removal rate. One of additional interesting results is that there seems to be the optimum mixture ratio of N 2 and O 2 gases to achieve a higher removal rate of SiC wafer.

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Section: Effect Of Oxidizer On Removal Rates Of Si-facementioning

confidence: 98%

Characteristics in SiC-CMP using MnO₂ slurry with Strong Oxidant under Different Atmospheric Conditions

et al. 2013

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“…SiC wafer processing time is set to 30min. The rotational speed of the upper platen, the lower platen and the carrier are 100min -1 ,50 min -1 ,and 15 min -1 respectively [4]. By using slurry A for CMP of SiC wafer processing, the removal rate was 15nm/h.…”

Section: Simultaneous Double-sided Polishing Machine and Experimental...mentioning

confidence: 99%

The Effects of Strong Oxidizing Slurry and Processing Atmosphere on Double-Sided CMP of SiC Wafer

Yin

Doi

Kurokawa

et al. 2012

AMR

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In order to achieve high removal rate and high-quality processing on SiC wafer, we carried out the CMP processing experiment with the new type CMP machine (Bell-jar) by using the slurry with the addition of strong oxidant (KMnO4). It was found that the high speed CMP processing was achieved by controlling the concentration of KMnO4 in the slurry, the pH of slurry and the processing atmosphere. By using the slurry with the addition of KMnO4 of 0.1mol/L, the removal rate was the fastest up to 1019nm/h in the fixed pH of 6. By use of the slurry of pH 3, the removal rate of C-face of SiC wafer was 1695nm/h On the other hand, the fastest removal rate of Si-face of SiC wafer was only 51nm/h by using the slurry whose pH is 7. In the open air atmosphere, the removal rate was 915nm/h, which was higher than that at the higher and lower atmospheric pressure.

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“…In our previous studies, a prototype simultaneous doubleside CMP machine was developed and some characteristics of Si CMP using the developed machine were investigated. 6,7) Furthermore, the effects of MnO 2 abrasives and a high-pressure atmosphere on the removal rate (RR) of SiC CMP have also been investigated. 8) In the present paper, SiC CMP is carried out with the developed CMP machine, and the effects of atmosphere and UV light irradiation on the CMP characteristics of SiC wafers are examined.…”

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confidence: 99%

“…The experimental machine is equipped with all the polishing elements inside a pressure chamber, named the ''Bell-Jar'', to conduct polishing in a closed ambient where the gas and gas pressure around the workpiece can be controlled. 6) The wafer carrier of this machine has a small circular motion between the upper and lower platens that rotate in opposite directions in order to achieve highefficiency and high-quality polishing performance.…”

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Effects of Atmosphere and Ultraviolet Light Irradiation on Chemical Mechanical Polishing Characteristics of SiC Wafers

Ohnishi

Doi

Kurokawa

et al. 2012

Jpn. J. Appl. Phys.

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To establish a high-efficiency and high-quality polishing process by controlling the workpiece environment, a prototype chemical mechanical polishing (CMP) machine that can perform double-side CMP simultaneously in a sealed pressure chamber was developed. Using this new machine, polishing experiments on single crystalline silicon carbide (SiC) wafers were carried out. The results showed that applying a highly pressurized O2 gas and ultraviolet light irradiation were effective in SiC CMP.

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Basic Characteristics of a Simultaneous Double-Side CMP Machine, Housed in a Sealed, Pressure-Resistant Container

Cited by 9 publications

References 1 publication

Characteristics in SiC-CMP using MnO₂ slurry with Strong Oxidant under Different Atmospheric Conditions

Characteristics in SiC-CMP using MnO₂ slurry with Strong Oxidant under Different Atmospheric Conditions

The Effects of Strong Oxidizing Slurry and Processing Atmosphere on Double-Sided CMP of SiC Wafer

Effects of Atmosphere and Ultraviolet Light Irradiation on Chemical Mechanical Polishing Characteristics of SiC Wafers

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Basic Characteristics of a Simultaneous Double-Side CMP Machine, Housed in a Sealed, Pressure-Resistant Container

Cited by 9 publications

References 1 publication

Characteristics in SiC-CMP using MnO2 slurry with Strong Oxidant under Different Atmospheric Conditions

Characteristics in SiC-CMP using MnO2 slurry with Strong Oxidant under Different Atmospheric Conditions

The Effects of Strong Oxidizing Slurry and Processing Atmosphere on Double-Sided CMP of SiC Wafer

Effects of Atmosphere and Ultraviolet Light Irradiation on Chemical Mechanical Polishing Characteristics of SiC Wafers

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Product

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Characteristics in SiC-CMP using MnO₂ slurry with Strong Oxidant under Different Atmospheric Conditions

Characteristics in SiC-CMP using MnO₂ slurry with Strong Oxidant under Different Atmospheric Conditions