Benefits of cryo-implantation for 28 nm NMOS advanced junction formation

Yang, C. L.; Li, C I; Lin, G. P.; Liu, R; Hsu, Bryant; Chan, Michael; Wu, J. Y.; Colombeau, B.; Guo, B. N.; Gossmann, H.‐J.; Wu, Tony; Feng, Wen-Sheng; Sun, H. L.; Lu, Shifeng

doi:10.1088/0268-1242/27/4/045003

Cited by 14 publications

(10 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Positive results are reported such as 3.5% device gain, junction leakage reduction, and DIBL improvement [1]. In this paper, Ga replacing single HS-P halo studies were conducted for SRAM or core NFET devices using a similar 28nm poly-SiON process reported previously [2][3][4].…”

Section: Introductionmentioning

confidence: 82%

Impact of gallium implant for advanced CMOS halo/pocket optimization

Chin

Yang

Lee

et al. 2014

2014 20th International Conference on Ion Implantation Technology (IIT)

View full text Add to dashboard Cite

Optimization of halo profile for advanced MOSFET device is important to control device short channel effect as well as device leakage. Multiple halo implants, such as mixture of Indium and boron to tailor the halo formation, have been used widely for n-FET devices. Amid its AMU and solubility, Gallium has a potential for better halo activation than Indium and reduced lateral straggling than boron. Therefore, Gallium could be a promising specie for device improvement through 1) halo optimization in planar devices, or 2) ground plane for retrograde well for better FinFET leakage characteristics. In this paper, Gallium is used to replace high scattering P dopant (HS-P) halo for SRAM or HS-P cluster halo for core NFET using a poly-SiON 28nm process with bare wafers and device splits. Secondary Ion Mass Spectroscopy (SIMS) was employed for dopant profiles for as-implanted and after thermal process. It is shown that when replacing HS-P or HS-P cluster halo byGallium an excessive device shift is observed. The overlap capacitance indicates that overlap lateral diffusion regions are significant different with Gallium halo than established process flow. The paper will discuss potential underlying physical mechanisms.

show abstract

Section: Introductionmentioning

confidence: 82%

Impact of gallium implant for advanced CMOS halo/pocket optimization

Chin

Yang

Lee

et al. 2014

2014 20th International Conference on Ion Implantation Technology (IIT)

View full text Add to dashboard Cite

show abstract

“…While the gate length was further scaled to 45 nm node and beyond, the transient enhanced diffusion (TED) effect of the dopant was more and more apparent and a desired junction depth (International Semiconductor Technology Development Roadmap(ITRS) required) could not be achieved by just low energy implantation. Some novel solutions e.g., co-implantation, cryogenic implantation or Cluster implant were developed to reduce the dopant's diffusion in the substrate during activation step [102][103][104][105][106]. For co-implantation, carbon was proved to be an appropriate species with good control of dopant diffusion in both silicon or germanium based transistors [107,108].…”

Section: Dopant Implantation In Cmosmentioning

confidence: 99%

The Challenges of Advanced CMOS Process from 2D to 3D

Radamson

Zhang

et al. 2017

Applied Sciences

View full text Add to dashboard Cite

Abstract:The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.

show abstract

“…However, PAI performed at Manuscript room temperature (RT) may not be sufficient for the reduction of the residual defects and junction leakage [20]. Recently, an advanced cold PAI technique using carbon (C) was reported as alternative to the traditional PAI performed at RT [20], [21] and a cold Si implant for NiPt silicide formation was reported [22]. The cold PAI effectively reduces the implantinduced residual defect density, junction leakage, and dopant diffusion.…”

Section: Introductionmentioning

confidence: 99%

Cold Silicon Preamorphization Implant and Presilicide Sulfur Implant for Advanced Nickel Silicide Contacts

Tong

Zhou

Low

et al. 2014

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

We report the first demonstration of a nickel silicide (NiSi) contact formation technique using cold silicon (Si) preamorphization implant (PAI) combined with presilicide sulfur (S) implant. The cold Si PAI suppresses the agglomeration of NiSi film at elevated temperatures. Presilicide S implant and its segregation at the interface of NiSi and n-type Si (n-Si) after silicidation significantly lowers the effective Schottky barrier height ( n B ) for electrons at the NiSi/n-Si contact. The S atoms in Si could be modeled as donor-like traps near the NiSi/n-Si interface, and a simulation study was performed to explain the reduction of n B caused by S. Index Terms-Cold silicon implant, nickel silicide (NiSi), Schottky barrier height (SBH), sulfur (S) segregation.

show abstract

Benefits of cryo-implantation for 28 nm NMOS advanced junction formation

Cited by 14 publications

References 10 publications

Impact of gallium implant for advanced CMOS halo/pocket optimization

Impact of gallium implant for advanced CMOS halo/pocket optimization

The Challenges of Advanced CMOS Process from 2D to 3D

Cold Silicon Preamorphization Implant and Presilicide Sulfur Implant for Advanced Nickel Silicide Contacts

Contact Info

Product

Resources

About