Benefits of the controlled reactive high-power impulse magnetron sputtering of stoichiometric ZrO2 films

Vlček, Jaroslav; Rezek, J.; Houška, Jiří; Kozák, Tomáš; Kohout, Jiřı́

doi:10.1016/j.vacuum.2014.12.004

Cited by 59 publications

(28 citation statements)

References 62 publications

(82 reference statements)

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“…which is monitored by the process controller. This feed-back process control is able to maintain a sputter deposition of stoichiometric films in the region between a more and less metallic mode, and to utilize exclusive benefits of the HiPIMS discharges in preparation of films [20]. Fig.…”

Section: Film Preparationmentioning

confidence: 99%

“…The consequently higher mobility of film atoms can naturally increase the column width (46, 38 and 21-24 nm for <S d > = 54, 18 and 7 Wcm -2 , respectively). Second, it leads to higher energy of some of the particles bombarding the growing films (stronger high-energy tail [20]). The energetic bombardment may, for example, destroy (amorphize) some of the crystals soon after their nucleation (see e. g. [25]), opening a larger space for the growth of the remaining ones.…”

Section: Effect Of Deposition Parameters On the Hfo 2 Film Microstrucmentioning

confidence: 99%

See 1 more Smart Citation

Microstructure of hard and optically transparent HfO2 films prepared by high-power impulse magnetron sputtering with a pulsed oxygen flow control

Zhang

Jiang

et al. 2016

Thin Solid Films

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Reactive high-power impulse magnetron sputtering was used to deposit HfO 2 films on Si substrates using a voltage pulse duration, t 1 , from 100 to 200 µs and an deposition-averaged target power density, , from 7.2 to 54 Wcm-2. The effects of these processing parameters on the microstructure and properties of the films were studied by atomic force microscopy, nanoindentation, X-ray diffraction, electron diffraction and high-resolution transmission electron microscopy. Four HfO 2 films were prepared with (1) t 1 = 100 µs, = 7.2 Wcm-2 (T100S7), (2) t 1 = 200 µs, = 7.3 Wcm-2 (T200S7), (3) t 1 = 200 µs, = 18 Wcm-2 (T200S18) and (4) t 1 = 200 µs, = 54 Wcm-2 (T200S54). All films were found to be composed of an interlayer next to the Si interface followed by a nano-columnar structure layer. The interlayer structure of the films was found to contain a population of lower density nanoscale regions. A reduction in in films T200S54, T200S18, T200S7 and T100S7 caused an increase in the interlayer thickness and a decrease in the width of the nano-columnar structures from ~46 nm to ~21 nm. This microstructural change was accompanied by a concomitant change of the grain boundary

~~show abstract~~

Section: Film Preparationmentioning
confidence: 99%

Section: Effect Of Deposition Parameters On the Hfo 2 Film Microstrucmentioning
confidence: 99%

Microstructure of hard and optically transparent HfO2 films prepared by high-power impulse magnetron sputtering with a pulsed oxygen flow control
Pi
¹
,
Zhang
²
,
Jiang
³

et al. 2016
Thin Solid Films
27
2
12
0
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“…Magnetron sputtering is a deposition technique that enables the microstructure to be controlled and the physical properties of the films to be tuned [ 14 ]. Reactive magnetron sputtering is popular because it is capable of producing compound films (including MOSs) with various stoichiometries and structures [ 15 , 16 , 17 ]. Among a wide variety of magnetron sputtering techniques, reactive high-power impulse magnetron sputtering (HiPIMS) is a prominent technique for the preparation of high-quality compound films.…”

Section: Introductionmentioning
confidence: 99%

Tuning Stoichiometry and Structure of Pd-WO3−x Thin Films for Hydrogen Gas Sensing by High-Power Impulse Magnetron Sputtering
Kumar
¹
,
Haviar
²
,
Rezek
³

et al. 2020
Materials
3
1
3
0
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By tuning the deposition parameters of reactive high-power impulse magnetron sputtering, specifically the pulse length, we were able to prepare WO3−x films with various stoichiometry and structure. Subsequently, the films were annealed in air at moderate temperature (350 °C). We demonstrate that the stoichiometry of the as-deposited films influences considerably the type of crystalline phase formed in the annealed films. The appropriate sub-stoichiometry of the films (approx. WO2.76) enabled crystallization of the monoclinic phase during the annealing. This phase is favorable for hydrogen sensing applications. To characterize the sensory behavior of the films, the tungsten oxide films were decorated by Pd nanoparticles before annealing and were assembled as a conductometric gas sensor. The sensory response of the films that crystallized in the monoclinic structure was proven to be superior to that of the films containing other phases.

~~show abstract~~

“…The sequential injection of gas portions causes a cyclic change of pressure conditions in the chamber. Before the next pulse of the gas, the pressure is lower than normal, which reduces the number of collisions and energy loss of the particles directed to the substrate [12][13][14][15]. Recently, there has also been some interest in a new modification of the sputtering method called gas impulse magnetron sputtering (GI MS) [16][17][18][19].…”

Section: Introductionmentioning
confidence: 99%

Comparison of the Physicochemical Properties of TiO2 Thin Films Obtained by Magnetron Sputtering with Continuous and Pulsed Gas Flow
Wiatrowski
¹
,
Mazur
²
,
Obstarczyk
³

et al. 2018
Coatings
72
3
23
0
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In this paper, a comparison of TiO2 thin films prepared by magnetron sputtering with a continuous and pulsed gas flow was presented. Structural, surface, optical, and mechanical properties of deposited titanium dioxide coatings were analyzed with the use of a wide range of measurement techniques. It was found that thin films deposited with a gas impulse had a nanocrystalline rutile structure instead of fibrous-like anatase obtained with a continuous gas flow. TiO2 thin films deposited with both techniques were transparent in the visible wavelength range, however, a much higher refractive index and packing density were observed for coatings deposited by the pulsed gas technique. The application of a gas impulse improved the hardness and scratch resistance of the prepared TiO2 thin films.

~~show abstract~~

Benefits of the controlled reactive high-power impulse magnetron sputtering of stoichiometric ZrO2 films

Cited by 59 publications

References 62 publications

Microstructure of hard and optically transparent HfO2 films prepared by high-power impulse magnetron sputtering with a pulsed oxygen flow control

Microstructure of hard and optically transparent HfO2 films prepared by high-power impulse magnetron sputtering with a pulsed oxygen flow control

Tuning Stoichiometry and Structure of Pd-WO3−x Thin Films for Hydrogen Gas Sensing by High-Power Impulse Magnetron Sputtering

Comparison of the Physicochemical Properties of TiO2 Thin Films Obtained by Magnetron Sputtering with Continuous and Pulsed Gas Flow

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