�ber das kubische tantalmononitrid mit B 1-Struktur

Electronic properties of cubic TaCxN1−x: A comparative study using self-consistent cluster and ab initio band-structure calculations and X-ray spectroscopy

“…Instead of the high-pressure-high-temperature methods adopted in Refs. [13,17], cubic tantalum mononitride with the NaCl-structure can be obtained from the initial elements using the method of self-spreading high-temperature synthesis [18], by nitriding of tantalum in glow discharge [19], by heating hexagonal TaN in a nitrogen-argon plasma jet [20]. The method of ultrahigh vacuum reactive magnetron sputter deposition has been employed comparatively recently for growth of thick cubic TaN x films on MgO(0 0 1) [15,21] and Si(0 0 1) [22,23] wafers.…”

Direct synthesis and characterization of single-phase tantalum nitride (Ta2N) nanocrystallites by dc arc discharge

“…For example, Yeh et al obtained a mixture of the hexagonal TaN and Ta 2 N by self-propagating hightemperature synthesis (SHS) [8]. Kieffer et al synthesized cubic TaN by heating hexagonal TaN above 1700 • C and at a pressure of 6 atm N 2 [9]. Matsumoto and Konuma carried out the preparation of cubic TaN by heating hexagonal TaN at reduced pressure through a plasma jet [10].…”

Growth and characterization of single-phase metastable tantalum nitride nanocrystals by dc arc discharge

“…At an early date, the cubic TaN was obtained by heating hexagonal TaN at a relevant pressure of N 2 . For instance, Kieffer et al [11] synthesized metastable cubic TaN by heating hexagonal TaN above 1700 1C and at a pressure of 6 atm N 2 . Matsumoto and Matsumoto [12] carried out preparation of cubic TaN by heating hexagonal TaN at reduced pressure through a plasma jet.…”