Direct synthesis and characterization of single-phase tantalum nitride (Ta2N) nanocrystallites by dc arc discharge

Lei, Weiwei; Liu, Dan; Zhang, Jian; Shen, Longhai; Li, Xuefei; Cui, Qiliang; Zou, Guangtian

doi:10.1016/j.jallcom.2007.04.219

Cited by 13 publications

(4 citation statements)

References 18 publications

(17 reference statements)

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“…In our experiments, it is found that the reaction time and N 2 pressure play important roles in the formation of the AlN pine-shaped nanostructure. Generally speaking, the optimal conditions for nucleation are low N 2 pressure (5−20 kPa) and short reaction time (10−30 min) for the synthesis of other nitride nanomaterials, and the synthesized nitrides are mostly nanoparticles. To find novel nanostructures, we increase the N 2 pressure and the reaction time simultaneously.…”

Section: Resultsmentioning

confidence: 99%

One-Step Synthesis of the Pine-Shaped Nanostructure of Aluminum Nitride and Its Photoluminescence Properties

et al. 2008

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An array of pine-shaped nanostructures of aluminum nitride (AlN) was synthesized through direct reaction between Al vapor and nitrogen gas in direct current (DC) arc discharge plasma without any catalyst or template. The as-prepared nanostructure consists of many pine-needle-shaped leaves with conical shape tips. The structure, morphology, and optical property of the nanostructure have been characterized by X-ray powder diffraction, energy-dispersive X-ray spectroscopy, field emission scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, Raman spectroscopy, and photoluminescence. A possible growth mechanism of the pine-shaped nanostructure was discussed. Two factors were found to be essential for branched nanostructure growth, i.e., the reaction time and N2 pressure. The photoluminescence spectrum of the nanostructure of AlN revealed an intense emission band, suggesting that there may be potential applications in electronic and optoelectronic nanodevices.

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Section: Resultsmentioning

confidence: 99%

One-Step Synthesis of the Pine-Shaped Nanostructure of Aluminum Nitride and Its Photoluminescence Properties

et al. 2008

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“…On the other hand, the N 2 pressure gradually decreased with the increase of the reaction time during the synthetic process. Generally speaking, the optimal conditions for nucleation for the synthesis of other nitride nanomaterials are low N 2 pressure (5−20 kPa) and short reaction time (10−30 min) and the nitrides synthesized are mostly nanoparticles. , However, in this experiment, only AlN nanowires were obtained when the N 2 pressure, voltage, current, and reaction time are 30 kPa, 30 V, 80 A, and 10 min, respectively. To obtain novel nanostructures, we increased the N 2 pressure and the reaction time simultaneously.…”

Section: Resultsmentioning

confidence: 79%

“…The synthesis was carried out in an improved direct arc discharge plasma setup. , In a typical run, aluminum (purity 99.999%) metal and N 2 gas (purity 99.999%) were used as aluminum and nitrogen sources, respectively. This novel morphology was found in the sample produced by direct nitrification of the aluminum metal in DC arc plasma with N 2 as the working medium.…”

Section: Methodsmentioning

confidence: 99%

Direct Synthesis, Growth Mechanism, and Optical Properties of 3D AlN Nanostructures with Urchin Shapes

Lei

Liú

Zhang

et al. 2009

Crystal Growth & Design

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Aluminum nitride (AlN) nanostructures have shown novel physical and chemical properties that are essential for technological applications. We report a vapor−solid growth of novel three-dimensional (3D) AlN urchin-like nanostructure in DC arc plasma via the direct reaction between Al vapor and N2 gas without any catalyst or template. The as-prepared 3D AlN nanostructures which have urchin-like shapes consist of numerous microdaggers with sharp tips and lengths of up to several micrometers and widths of 0.5−2 μm. A growth mechanism of AlN nanostructures with urchin shapes was suggested and explained in detail. The optical properties of the AlN nanostructures with urchin shapes were also studied with photoluminescence spectrum, which reveals a broad emission, suggesting potential applications in electronic and optoelectronic nanodevices.

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“…11) Tantalum nitride thin films can be prepared on Si substrates by reactive pulsed DC magnetron sputtering. 12) Herein, we report a novel approach to synthesize Ta 2 N nanostallines by a one-step chemical reaction of metallic magnesium, tantalum pentoxide, and ammonium chloride at 650 °C. Tantalum pentoxide, as a tantalum source, has the advantages of wide source, low price and easy operation.…”

mentioning

confidence: 99%

Low temperature synthesis of nanocrystalline tantalum nitride

Zhang

et al. 2023

J. Ceram. Soc. Japan

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Tantalum nitride (Ta 2 N) nanocrystals have been successfully synthesized at 650 °C through a chemical reaction in an autoclave. The X-ray powder diffraction pattern indicates that the product is hexagonal phase Ta 2 N. Transmission electron microscopy image shows that the obtained Ta 2 N product is consist of nanoparticles with an average size of about 50 nm. Furthermore, the thermal gravimetric analyzer (TGA) result indicates that the product has good thermal stability and oxidation resistance below 300 °C in air.

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Direct synthesis and characterization of single-phase tantalum nitride (Ta2N) nanocrystallites by dc arc discharge

Cited by 13 publications

References 18 publications

One-Step Synthesis of the Pine-Shaped Nanostructure of Aluminum Nitride and Its Photoluminescence Properties

One-Step Synthesis of the Pine-Shaped Nanostructure of Aluminum Nitride and Its Photoluminescence Properties

Direct Synthesis, Growth Mechanism, and Optical Properties of 3D AlN Nanostructures with Urchin Shapes

Low temperature synthesis of nanocrystalline tantalum nitride

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