Bi/In thermal resist for both Si anisotropic wet etching and Si/SiO 2 plasma etching

Chapman, Glenn H.; Tu, Yuqiang; Peng, Jun

doi:10.1117/12.524690

Cited by 4 publications

(4 citation statements)

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“…The applications of Bi/In laser converted films were reported in our earlier papers [17,18]. In that research Bi/In oxide film was shown to be a new kind of inorganic thermal resists with low energy exposure requirements due to its low eutectic melting point.…”

Section: Applications Of Patterned Sn/in Oxide Filmsmentioning

confidence: 95%

“…Further more Bi/In also shows large changes in transparency with laser exposure going from 3 OD to 0.26 OD. It has been used to create good direct write photomask [17,18]. Here we briefly explore Sn/In applications in the same areas.…”

Section: Applications Of Patterned Sn/in Oxide Filmsmentioning

confidence: 98%

“…Our early research showed exposed Bi/In film was highly resistant to alkaline-based anisotropic silicon etching solutions. Hence it has been successfully used as etch mask in alkaline based anisotropic wet etch process [17,18]. Since Sn/In is closely related to ITO, a material with known compatible in Si technology, thus it may be preferably to use Sn in some applications Similar to exposed Bi/In film, the exposed Sn/In film can also be used as an etch resist mask in the anisotropic silicon etch process.…”

Section: Sn/in Use As An Anisotropic Etch Resistmentioning

confidence: 99%

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Laser direct write patterned indium tin oxide films for photomasks and anisotropic resist applications

Peng

Chapman

2004

Photonics North 2004: Photonic Applications in Astronomy, Biomedicine, Imaging, Materials Processing, and Education

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A laser direct write process has been developed for turning patterned bimetallic Sn/In film into a indium tin oxide layer. Sn over In films (15-120nm thick) with a 1:10 thickness ratio were deposited by DC sputtering. An argon laser beam (0.1 -0.9 W, spot size: 2 micron, scan speed: 1 cm/s) exposes the film into patterns. These Sn/In films' optical absorption changed from 3 OD at deposition to 0.24 OD after exposure (at 356 nm). XRD, SEM, EDX, and Auger have been used to investigate the film's microstructure and composition suggesting ITO like characteristics. XRD indicated a preferred In 2 O 3 (222) orientation which is similar to ITO films deposited by other methods. Four-point probe tests showed a converted film resistivity of 0.26x10 -3 to 9.7x10 -3 ohm-cm depending on the laser power and Sn concentration. Hall tests indicated that the bulk carrier concentration was in the range of 10 18 to 10 20 cm -3 . Developed in a wet HCl: H 2 O 2 : H 2 O =1:1:48 solution removes unexposed Sn/In leaving patterned ITO films created at much lower laser power levels than needed for ablative patterning of ITO. Developed films are also resistant to KOH anisotropic etching at a 1:700 ratio producing <111> trenches in Si (100). The large change in optical density means Sn/In films can be used as a material of the direct write photomasks.

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Section: Applications Of Patterned Sn/in Oxide Filmsmentioning

confidence: 95%

Section: Applications Of Patterned Sn/in Oxide Filmsmentioning

confidence: 98%

Section: Sn/in Use As An Anisotropic Etch Resistmentioning

confidence: 99%

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Laser direct write patterned indium tin oxide films for photomasks and anisotropic resist applications

Peng

Chapman

2004

Photonics North 2004: Photonic Applications in Astronomy, Biomedicine, Imaging, Materials Processing, and Education

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“…Structural analyses have been carried out to understand the mechanism of Sn/In turning more transparent after laser exposure [20,21]. Figure 5 shows the XRD patterns of 120 nm thick, 10% Sn/In film.…”

Section: Improving Optical Characteristics Of Exposed Bimetallic Filmsmentioning

confidence: 99%

Calibrating grayscale direct write bimetallic photomasks to create 3D photoresist structures

Chapman

Dykes

et al. 2004

SPIE Proceedings

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Bimetallic thin films were previously shown to create laser direct write binary and analog gray scale photomasks. DCsputtered Sn/In (5at.% Sn, 80 nm) oxidize under laser exposure, modifying the optical density at 365 nm from >3OD to <0.22OD. Bimetallic Sn/In thin film grayscale photomasks have been successfully used to create concave and convex 3D structures using mask aligners with Shipley photoresists. To produce precise 3D structures in the organic photoresists, every mask making step was studied. Compensations during the mask making process were necessary because that the relationship between the optical density of the exposed bimetallic films and the laser writing power is not accurately linear, and also that the response of the photoresists is not linear to the exposure. V-grooves with straight slope profile were produced with calibrations taken into account. X-ray diffraction analysis indicates that structure of laser exposed Sn/In bimetallic films is similar to that of ITO films, suggesting new directions for improvement of bimetallic film optical properties, and that the theoretical maximum transmission should approach pure ITO's ~0.05OD in the visible wavelength.

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Rapid Prototyping and Rapid Tooling Techniques for the Manufacturing of Silicon, Polymer, Metal and Ceramic Microdevices

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Bi/In thermal resist for both Si anisotropic wet etching and Si/SiO 2 plasma etching

Cited by 4 publications

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Laser direct write patterned indium tin oxide films for photomasks and anisotropic resist applications

Laser direct write patterned indium tin oxide films for photomasks and anisotropic resist applications

Calibrating grayscale direct write bimetallic photomasks to create 3D photoresist structures

Rapid Prototyping and Rapid Tooling Techniques for the Manufacturing of Silicon, Polymer, Metal and Ceramic Microdevices

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