Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM

Bastiman, F.; Cullis, A. G.; David, J.P.R.; Sweeney, S. J.

doi:10.1016/j.jcrysgro.2011.12.058

Cited by 45 publications

(33 citation statements)

References 18 publications

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“…A number of authors have suggested that significant Bi atoms exist on the GaAs 1-x Bi x surface during growth [25,27,39]. In support of this statement, we summarize the strong evidence as follows.…”

Section: A Structure Of the Surfacesupporting

confidence: 64%

First-principles studies on molecular beam epitaxy growth ofGaAs1−xBix

Luo

Yang

et al. 2015

Phys. Rev. B

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We investigate the molecular beam epitaxy (MBE) growth of GaAs 1-x Bi x film using density functional theory with spin-orbit coupling to understand the growth of this film, especially the mechanisms of Bi incorporation. We study the stable adsorption structures and kinetics of the incident MBE species (As 2 molecule, Ga atom, Bi atom, and Bi 2 molecule) on the (2×1)-Ga sub ||Bi surface and a proposed q(1×1)-Ga sub ||AsAs surface, where Ga sub ||XY refers to a Ga-terminated GaAs(001) substrate with surface layers of X and Y. The q(1×1)-Ga sub ||AsAs surface has a quasi-(1×1) As layer above the Ga-terminated GaAs substrate and a randomly-oriented As dimer layer on top. We obtain the desorption and diffusion barriers of the adsorbed MBE species and also the reaction barriers of three key processes related to Bi evolution, namely, Bi incorporation, As/Bi exchange, and Bi clustering. The results help explain the experimentally observed dependence of Bi incorporation on the As/Ga ratio and growth temperature. Furthermore, we find that As 2 exchange with Bi of the (2×1)-Ga sub ||Bi surface is a key step controlling the kinetics of the Bi incorporation. Finally, we explore two possible methods to enhance the Bi incorporation, namely, replacing the MBE growth mode from co-deposition of all fluxes with a sequential deposition of fluxes and applying asymmetric in-plane strain to the substrate.

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Section: A Structure Of the Surfacesupporting

confidence: 64%

First-principles studies on molecular beam epitaxy growth ofGaAs1−xBix

Luo

Yang

et al. 2015

Phys. Rev. B

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“…The Bi/GaAs (001) (2 × 4) reconstruction is similar to GaAs (001) (2 × 4) with the top dimers replaced by Bi deduced from scanning tunneling microscope (STM) images [108]. Deposit of 1 ML Bi on GaAs (001) can temporarily make the surface staying in (2 × 1) and (1 × 3) reconstruction but soon change into a more stable (4 × 3) reconstruction, losing 1/3 ML of Bi [109]. When Bi atoms are deposited onto a surface with a (1 × 3) reconstruction, they tend to form droplets due to surface Bi-Bi interaction, while depositing on a (2 × 1) surface produces a flat layer and causes As rich, Bi dificiency in the [−110] direction and Bi clusters.…”

Section: Surface Reconstructionmentioning

confidence: 75%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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“…24,[34][35][36] From the reported data, it is clear that the boundaries of Bi-related reconstructions at T s < 370 C are relatively insensitive to changes in T s but extremely sensitive to small changes in the As/Ga ratio. 24 In Ga(As,Bi)(001), there are two main surface reconstructions: the (2 Â 1) reconstruction occurring at low As/Ga ratios close to stoichiometry (this reconstruction enables high quality layers with the highest Bi incorporation 19,24,34 ) and a set of (n Â 3) reconstructions with multiple stable configurations and dimer disorder among the individual (4 Â 3) surface units.…”

Section: B Surface Spinodal Decompositionmentioning

confidence: 86%

Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers

Luna

Puustinen

et al. 2015

Journal of Applied Physics

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We report on the spontaneous formation of lateral composition modulations (LCMs) in Ga(As,Bi) epilayers grown by low-temperature (<300 C) molecular beam epitaxy (MBE) on GaAs(001). Both cross-section and plan-view transmission electron microscopy techniques are used to investigate the nature of the LCMs, consisting of Bi-rich cylinder-like nanostructures lying along the [001] growth direction. The observed LCMs are the consequence of a two-dimensional phase separation process occurring at the surface of the growing epilayers, and their columnar nature is consistent with a surface-directed spinodal decomposition process. Although LCMs are thermodynamically driven, we show how they can be kinetically controlled, in particular, through the As/Ga flux ratio and the substrate temperature. This is a result of LCMs developing from surface atomic diffusion processes, since the atomic dimer configurations on the surface alter adatom diffusivity. The significant role of the surface reconstructions is also discussed. V C 2015 AIP Publishing LLC.

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Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM

Cited by 45 publications

References 18 publications

First-principles studies on molecular beam epitaxy growth ofGaAs1−xBix

First-principles studies on molecular beam epitaxy growth ofGaAs1−xBix

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers

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