Bi-induced <i>p</i>-type conductivity in nominally undoped Ga(AsBi)

Pettinari, G.; Patanè, A.; Polimeni, A.; Capizzi, M.; Lu, X.; Tiedje, T.

doi:10.1063/1.3690901

Cited by 43 publications

(41 citation statements)

References 22 publications

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“…Interestingly, samples with larger Bi contents display significant or near total screening of the LO(Γ) band. While the absolute size of the hole concentrations determined here diverge from the transport measurements of Pettinari et al [12], likely origins for the discrepancy are discussed.…”

Section: Introductioncontrasting

confidence: 46%

“…The damping is more severe for GaAsBi than for GaAs since additional scattering mechanisms exist in a highly mismatched ternary alloy. Pettinari et al [12] measured an order of magnitude reduction in μ h for GaAs 1−x Bi x for x < 6% with corresponding increase in m * h . The FWHM of the two GaAs-like optical modes in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Recently, Nargelas et al [10] showed alloying nominally undoped GaAs with group V Bi counterintuitively introduces p-type carriers: holes thermally excited from Bi-induced acceptor levels lying 26.8 meV above the valence band edge [11]. Pettinari et al [12] revealed -through electrical transport measurements -that the hole concentration rises with x up to p = 2.4 × 10 17 cm −3 at x = 10.6%. They [13] further demonstrated that the acceptor states are passivated through hydrogen incorporation.…”

Section: Introductionmentioning

confidence: 99%

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Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration

Steele¹,

Lewis²,

Henini³

et al. 2014

Opt. Express

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Abstract:We report room-temperature Raman scattering studies of nominally undoped (100) GaAs 1−x Bi x epitaxial layers exhibiting Biinduced (p-type) longitudinal-optical-plasmon-coupled (LOPC) modes for 0.018 ≤ x ≤ 0.048. Redshifts in the GaAs-like optical modes due to alloying are evaluated and are paralleled by strong damping of the LOPC. The relative integrated Raman intensities of LO(Γ) and LOPC A LO /A LOPC are characteristic of heavily doped p-GaAs, with a remarkable near total screening of the LO(Γ) phonon (A LO /A LOPC → 0) for larger Bi concentrations. A method of spectral analysis is set out which yields estimates of hole concentrations in excess of 5 × 10 17 cm −3 and correlates with the Bi molar fraction. These findings are in general agreement with recent electrical transport measurements performed on the alloy, and while the absolute size of the hole concentrations differ, likely origins for the discrepancy are discussed. We conclude that the damped LO-phonon-hole-plasmon coupling phenomena plays a dominant role in Raman scattering from unpassivated nominally undoped GaAsBi.

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Section: Introductioncontrasting

confidence: 46%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration

Steele¹,

Lewis²,

Henini³

et al. 2014

Opt. Express

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“…Electron mobility of GaAsBi does not show significant degradation with Bi alloying [50,51,220,221], which is the opposite of the case of N incorporation in GaAs where the electron mobility is significantly degraded due to strong carrier scattering at the localized states formed by isolated N and N-clusters [222,223]. Bismuth incorporation causes degradation of hole mobility in GaAs.…”

Section: Transport Propertiesmentioning

confidence: 78%

“…Pettinari et al [220,224] studied transport properties of GaAs 1-x Bi x films. The undoped GaAsBi epilayers demonstrates p-type conductivity in a wide range of Bi-concentrations (0.6% ≤ x ≤ 10.6%).…”

Section: Transport Propertiesmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi‐induced acceptor states

Pettinari

Polimeni

Capizzi

et al. 2013

Physica Status Solidi (b)

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The puzzling electronic and transport properties of the Ga(AsBi) alloy are investigated for a wide range of Bi-concentrations (x=0-10.6%) by means of various experimental techniques in high magnetic fields (B up to 30 T): magneto-photoluminescence spectroscopy, magneto-far-infrared (FIR) absorption spectroscopy, and Hall effect measurements. Our experimental findings suggest that the strength of hybridization of the continuum states of the valence and conduction bands with the Bi-related electronic levels depends on the Bi-concentration, thus leading to band edges with a localized (for x < 6%) or band-like character (for x > 8%). We report an unusual compositional-dependence of the exciton reduced mass (mu(exc)), whose value can be larger (for x < 6%) or smaller (for x > 8%) than in GaAs depending on the Bi-concentration. Correspondingly, the free-hole mobility (mu(h)) decreases with increasing Bi-concentration and eventually tends to increase for x > similar to 8%. The incorporation of Bi in GaAs also induces the formation of acceptor levels, which we reveal by FIR absorption spectroscopy and Hall effect measurements. The Bi-induced acceptors are characterized by an exceedingly high value of the effective ground-state g-factor (g(eff) similar to 15) and are responsible for the increasing p-type conductivity observed in nominally undoped Ga(AsBi) alloys with increasing Bi-concentration. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

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Bi-induced p-type conductivity in nominally undoped Ga(AsBi)

Cited by 43 publications

References 22 publications

Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration

Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi‐induced acceptor states

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