Bias Effects on the Growth of Helium-Containing Titanium Films

Zhang, Li-Ran; Deng, Anguo; Yang, Dongxu; Zhou, Yulu; Hou, Qing; Shi, Liqun; Zhong, Yuanhong; Wang, Boyu

doi:10.1088/0256-307x/28/7/077802

Cited by 4 publications

(2 citation statements)

References 15 publications

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“…The energy of the positron beam varied from 0.1 to 20 keV. The energy of γ photo from the e + -eannihilation radiation was recorded by a p-type high-purity germanium detector [9]. Figure I (a-b) shows the AFM image of samples measured within the 10 × 10 μm.…”

Section: Experimental Processmentioning

confidence: 99%

Defect Characteristics of Be-doped GaSb Film Grown on GaAs

Guo¹,

Chen²

2018

Proceedings of the 2018 3rd International Conference on Electrical, Automation and Mechanical Engineering (EAME 2018)

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The defect characteristics of the Be-doped GaSb and no-doped GaSb film grown on GaAs and GaSb substrate respectively were analysed by the method of molecular beam epitaxy (MBE), positron annihilation Doppler broadening spectroscopy (PADBS), X-ray diffraction spectra (XRD) and atomic force microscopy (AFM). The experimental results show that the defects in Be-doped semiconductor GaSb could be attributed to existence of intrinsic defect, which has no complex defects in it. After doped Be atom, the crystallization of GaSb become worse, and the Be existed mainly in the interstitial atom.

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Section: Experimental Processmentioning

confidence: 99%

Defect Characteristics of Be-doped GaSb Film Grown on GaAs

Guo¹,

Chen²

2018

Proceedings of the 2018 3rd International Conference on Electrical, Automation and Mechanical Engineering (EAME 2018)

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“…[8] The behavior of the implanted He and the microstructure of the He-Ti film have been detected in recent articles. [9,10] The first-principles calculations of Seletskaia et al, [11] which are based on the density functional theory (DFT), explain the energetics of He defects in bcc transition metals. Both pair potentials and effective-medium theory fail to reproduce the preference order of formation energies.…”

mentioning

confidence: 99%

Trapping Behavior of He in Ti Revisited by ab initio Calculations

Wan¹,

Zhou²,

Li³

et al. 2014

Chinese Phys. Lett.

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We report a detailed ab initio study of the trapping behavior of interstitial helium atoms (IHAs) in hcp Ti. The tetrahedral interstitial site for one He is confirmed to be the most stable IHA configuration, but the most favorable interstitial site comprises two adjacent octahedral sites for two helium atoms. The octahedral IHA can trap another IHA regardless of the site where it is initially located, whereas the tetrahedral IHA cannot. Hybridization among the different states is responsible for the stable order, which has significant implications for He clustering and bubble nucleation that can affect material performance in future fusion reactors. These results provide the basis for the development of improved atomistic models.

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Effect of bias voltage on microstructure and nanomechanical properties of Ti films

Yinglong

Liu

et al. 2014

Transactions of Nonferrous Metals Society of China

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Bias Effects on the Growth of Helium-Containing Titanium Films

Cited by 4 publications

References 15 publications

Defect Characteristics of Be-doped GaSb Film Grown on GaAs

Defect Characteristics of Be-doped GaSb Film Grown on GaAs

Trapping Behavior of He in Ti Revisited by ab initio Calculations

Effect of bias voltage on microstructure and nanomechanical properties of Ti films

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