Bias, frequency, and area dependencies of high frequency noise in AlGaAs/GaAs HBT's

Liou, Juin J.; Jenkins, T.; Liou, L.L.; Neidhard, R.; Barlage, Douglas W.; Barrette, J.; Mack, M.; Bozada, C.; Lee, R.H.Y.; Dettmer, R.; Sewell, J.

doi:10.1109/16.477601

Cited by 8 publications

(4 citation statements)

References 14 publications

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“…This means that neither device is the best choice for low-noise applications. The shot noise in the base-collector junction I 2 was found to be larger than that in the emitter-base junction, in agreement with the results reported in [7]. The increase of the collector current gives rise to an increase of I 2 and the emitterbase junction shot noise I 1 .…”

Section: Resultssupporting

confidence: 90%

“…The microwave noise performance of the GaAs/AlGaAs HBTs was studied in [7]. The influence of emitter area, collector voltage and current influence on the shot and burst noise were accounted for.…”

Section: Introductionmentioning

confidence: 99%

“…This is usually achieved by heavy doping. It was found that the main noise source in HBTs is the base current shot noise [7] and following the shot noise model [13] it could be reduced by decreasing the base resistance as well as the emitter thickness and the emitter-base junction capacitance.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Microwave noise in InP/InGaAs and GaAs/AlGaAs heterojunction bipolar transistors

Sakalas

Garcı́a

Zirath

et al. 2000

Semicond. Sci. Technol.

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Section: Resultssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

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Microwave noise in InP/InGaAs and GaAs/AlGaAs heterojunction bipolar transistors

Sakalas

Garcı́a

Zirath

et al. 2000

Semicond. Sci. Technol.

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“…For all HBTs, spectra exhibit excess noise composed of 1/f noise and g-r noise. This type of noise behaviour has already been reported in the literature [13,14]. White noise is expected to show up at a frequency higher than the frequency range used.…”

Section: Noise Measurement Procedures and Spectrasupporting

confidence: 76%

Comparison of noise between passivated and unpassivated AlGaAs/GaAs and GaInP/GaAs HBTs

Jarrix

Delseny

Mourier

et al. 1997

Semicond. Sci. Technol.

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A comparison of AlGaAs/GaAs and GaInP/GaAs heterojunction bipolar transistors (HBTs) of similar geometry is presented. First-order measurements show the importance of recombination currents in AlGaAs/GaAs transistors. Passivation improves the d.c. performance of GaInP/GaAs devices only. Low-frequency noise measurements are then performed. Spectra show 1/f noise and g-r components. White noise is never reached. An analysis of each excess noise component is performed versus bias current. The 1/f noise level and bias dependence is quite similar in all transistors. Generation-recombination noise component levels are more important in AlGaAs/GaAs HBTs. This is attributed to characteristic traps. For both types of HBT no appreciable influence from the passivation is observed and noise sources are found to be located principally in the emitter-base junction.

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Reliability of III–V based heterojunction bipolar transistors

Christianson¹

1998

Microelectronics Reliability

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Bias, frequency, and area dependencies of high frequency noise in AlGaAs/GaAs HBT's

Cited by 8 publications

References 14 publications

Microwave noise in InP/InGaAs and GaAs/AlGaAs heterojunction bipolar transistors

Microwave noise in InP/InGaAs and GaAs/AlGaAs heterojunction bipolar transistors

Comparison of noise between passivated and unpassivated AlGaAs/GaAs and GaInP/GaAs HBTs

Reliability of III–V based heterojunction bipolar transistors

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