Deep level defects in high-conductivity ZnSe have been observed with optical deep level transient spectroscopy. An electron trap and hole trap with energy levels at Ec  −0.33 and Ev +0.71 eV, respectively, were detected in the as-grown material. Trap concentrations were in the range of 0.4–2.0×1015 cm−3. For zinc annealed samples, a trap at Ev +0.21 eV was also observed in concentrations as high as 9×1015 cm−3. The chemical identity of the hole traps remain undetermined, but experimental evidence indicates they may involve native defects.

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Forward bias capacitance has been used to examine the Au/W/GaAs and Au/Pt/Ti/GaAs Schottky barriers present in power microwave MESFET devices to see if interface-state generation plays any role in the previously reported reverse bias barrier height aging process. If a constant carrier capture cross-section is assumed, forward bias capacitance has shown that for samples strongly susceptible to aging (i.e. the Au/W/GaAs samples in this study) interface-state generation is taking place during the aging process. The validity of the constant capture cross section assumption has been tested by examining the I-V properties. For those samples whose reverse I-V properties were not dominated by thermionic-field emission, similar increases in interface-state densities were evaluated from the I-V characteristics for the degraded samples.

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