Reliability of III–V based heterojunction bipolar transistors

Christianson, K. A.

doi:10.1016/s0026-2714(97)00070-x

Cited by 6 publications

(1 citation statement)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With the high speed and microwave frequency application in 3G mobile communications, GaAs-based heterojunction bipolar transistors (HBTs) have received much attention in both wireless and wired consumer products [I, 21. These HBTs with their inherent superiority to bipolar devices make them more popular as compared to field-effect devices [3]. However, the typical mesa etching techniques used to fabricate these devices creates an extrinsic base surface, where the surface states consume a significant portion of the electrons injkcted from the emitter to the base.…”

Section: Introductionmentioning

confidence: 99%

Sulfur- and InGaP-passivated heterojunction bipolar transistors

Tan

Chen²,

Chen³

et al.

The Fourth International Workshop on Junction Technology, 2004. IWJT '04.

View full text Add to dashboard Cite

We have been successfully implemented for the InGaPlGaAs heterojunction bipolar transistors (HBTs) with the sulfur-treated GaAs base layer comparing with HBTs fabricated using emitter-edge thinning InGaP layer. As compared with non-passivated HBTs with an exposed extrinsic GaAs base, the improved base leakage current for InGaP-passivated HBTs is due to the inherent low surface recombination velocity associated with an InGaP layer. In views of the sulfur-passivated HBTs exhibited an enhanced current gain is attributed to the modification of the GaAs surface electronic properties. The maximum dc current gain available is 75 at low base current for sulfur-passivated HBTs. The sulfur-passivated devices also exhibit very good linearity in wide range of collector (10.' to 10.' A). Furthermore, detailed sulfur-treatment conditions and effects on device performance are investigated.

show abstract

Section: Introductionmentioning

confidence: 99%