1998
DOI: 10.1088/0953-8984/10/47/011
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Binding and transition energies of shallow impurities in cylindrical GaAs quantum-well wires under a uniform magnetic field

Abstract: We report a calculation of the binding and transition energies of the ground and some excited states of a hydrogenic donor impurity located at the axis of a cylindrical GaAs quantum-well wire, under the action of a magnetic field applied in the axial direction. Calculations are made using the effective-mass approximation within the variational approach for infinite confinement potential. Our results are obtained for several wire radii and as a function of the applied magnetic field. We have found that some exc… Show more

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Cited by 32 publications
(16 citation statements)
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“…(1) should be replaced by the z and ρ dependent potential V (ρ, z, P). Our calculations for the QWW case (with radius R) includes both the infinite and finite potential model, in which case the variational wave functions are respectively given by [4,5] …”
Section: Theoretical Frameworkmentioning
confidence: 99%
See 1 more Smart Citation
“…(1) should be replaced by the z and ρ dependent potential V (ρ, z, P). Our calculations for the QWW case (with radius R) includes both the infinite and finite potential model, in which case the variational wave functions are respectively given by [4,5] …”
Section: Theoretical Frameworkmentioning
confidence: 99%
“…In the last two decades many works related with the magnetic fields effects on the properties of the electron-impurity systems have been reported in GaAs − Ga 1−x Al x As quantumwell wires (QWWs) and quantum dots (QDs) [4][5][6]. The effects of hydrostatic pressure on such systems, and in particular on the photoionization (PI) cross-section, show that the PI depends strongly on the symmetry of the potential that confines the carriers, of the energy of the incident photon, and of the impurity distribution inside the heterostructure [7].…”
Section: Introductionmentioning
confidence: 99%
“…In addition, their influence can be controlled by the presence of external fields. Several articles have been published on the influence of external static (electric and magnetic) fields on hydrogenic impurities [10][11][12][13][17][18][19][29][30][31][32][33][34][35].…”
Section: Introductionmentioning
confidence: 99%
“…Extensive theoretical and experimental work have been devoted to the study of the optical and electronic properties presented by these nanostructures because of their possible application in optoelectronic device [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%