Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

Koryazhkina, M. N.; Тихов, С. В.; Mikhaylov, A. N.; Belov, A. I.; Королев, Д. С.; Антонов, И. Н.; Karzanov, V. V.; Горшков, О. Н.; Tetelbaum, D. I.; Karakolis, Panagiotis; Dimitrakis, P.

doi:10.1088/1742-6596/993/1/012028

Cited by 9 publications

(1 citation statement)

References 13 publications

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“…The memristors are developed on the basis of various materials: SrTiO 3 -type perovskite films, organic films [22], high-k dielectrics TiO 2 , HfO 2 [23], ZrO 2 , Ta 2 O 5 [24], TaO x [25,26], Ta 2 O 5-x /TaO 2-x [27], Nb 2 O 5 , Al 2 O 3 , GeO x [28], SiN x [29][30][31][32][33] and SiO x [34][35][36]. The silicon oxide advantage over other materials is its good compatibility with the silicon technology.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and charge transport mechanism in a forming-free SiO _x -based memristor

et al. 2020

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THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiO x , which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiO x -based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiO x -based memristor in different states, are determined.

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Section: Introductionmentioning

confidence: 99%

Electronic structure and charge transport mechanism in a forming-free SiO _x -based memristor

et al. 2020

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Negative and Positive Photoconductivity and Memristor Effect in Alloyed GeO[SiO] Films Containing Ge Nanoclusters

Володин

Камаев

Vergnat

2020

Physica Rapid Research Ltrs

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Metal–insulator–semiconductor (MIS) structures based on GeO[SiO] films containing amorphous Ge nanoclusters are fabricated on n+‐Si(100) substrate by co‐evaporation of GeO2 and SiO powders in ultra‐high vacuum. Indium tin oxide (ITO) top electrodes are deposited using magnetron sputtering. According to Raman data, annealing at 500 °C for 20 min leads to an increase in amorphous Ge volume. Current–voltage characteristics provide clear evidence of resistive switching (memristor effect) in the annealed MIS structure after the forming procedure. Both negative and positive photoconductivities are observed in the MIS structure before forming when both negative/positive voltage biases are applied to the top ITO electrode. This is possibly due to light‐stimulated recharging of holes originating from Ge‐nanoclusters, which act as traps.

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Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory

Hsu¹,

Liu²,

Gan³

et al. 2021

Surface and Coatings Technology

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Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

Cited by 9 publications

References 13 publications

Electronic structure and charge transport mechanism in a forming-free SiO _x -based memristor

Electronic structure and charge transport mechanism in a forming-free SiO _x -based memristor

Negative and Positive Photoconductivity and Memristor Effect in Alloyed GeO[SiO] Films Containing Ge Nanoclusters

Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory

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Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

Cited by 9 publications

References 13 publications

Electronic structure and charge transport mechanism in a forming-free SiO x -based memristor

Electronic structure and charge transport mechanism in a forming-free SiO x -based memristor

Negative and Positive Photoconductivity and Memristor Effect in Alloyed GeO[SiO] Films Containing Ge Nanoclusters

Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory

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Product

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Electronic structure and charge transport mechanism in a forming-free SiO _x -based memristor

Electronic structure and charge transport mechanism in a forming-free SiO _x -based memristor