Bismuth telluride topological insulator synthesized using liquid metal alloys: Test of NO2 selective sensing

Mousavi, Maedehsadat; Ghasemian, Mohammad B.; Han, Jialuo; Wang, Yifang; Yang, Jiong; Tang, Jianbo; Idrus-Saidi, Shuhada A.; Guan, Xinwei; Christoe, Michael J.; Merhebi, Salma; Zhang, Chengchen; Tang, Junma; Jalili, Rouhollah; Daeneke, Torben; Wu, Tom; Kalantar‐zadeh, Kourosh; Mayyas, Mohannad

doi:10.1016/j.apmt.2021.100954

Cited by 25 publications

(27 citation statements)

References 66 publications

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“…70,71 Similarly, highly crystalline bismuth telluride (Bi 2 Te 3 ) nanostructured platelets were synthesized at the surface of EGaIn drops. 72 As another example, the formation of layered double oxides was also achieved using a room temperature liquid alloy of Ga, In and Al. 73 In this study, the Al-containing LM alloy was placed in an aqueous solution containing divalent cationic species including Ni 2+ or Co 2+ ions.…”

Section: Surface Chemistry Of Post-transition Lms and Alloys And Surface Layeringmentioning

confidence: 99%

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Applications of liquid metals in nanotechnology

et al. 2022

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Section: Surface Chemistry Of Post-transition Lms and Alloys And Surface Layeringmentioning

confidence: 99%

“…18,100 Gas sensing materials can also be synthesized at the surface of LMs. 56,72 For example, Bi 2 O 3 -doped SnO nanosheets with controlled Bi 2 O 3 doping showed selective conductivity responses to NO 2 and H 2 . 56 Heavy metal ions sensing.…”

Section: Sensorsmentioning

confidence: 99%

Applications of liquid metals in nanotechnology

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“…The peaks located at 156.6 and 162 eV (Bi4f 7 and Bi4f 5 respectively) are related to the fractions of elemental bismuth due to the residual Bi metal. [ 31 ] It is important to consider that these metallic residue signals are just trace values. The O1s spectrum of the nanosheet harvested from the surface of 90%Bi liquid metal was deconvoluted into two major peaks.…”

Section: Resultsmentioning

confidence: 99%

Doping Process of 2D Materials Based on the Selective Migration of Dopants to the Interface of Liquid Metals

et al. 2021

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The introduction of trace impurities within the doping processes of semiconductors is still a technological challenge for the electronics industries. By taking advantage of the selective enrichment of liquid metal interfaces, and harvesting the doped metal oxide semiconductor layers, the complexity of the process can be mitigated and a high degree of control over the outcomes can be achieved. Here, a mechanism of natural filtering for the preparation of doped 2D semiconducting sheets based on the different migration tendencies of metallic elements in the bulk competing for enriching the interfaces is proposed. As a model, liquid metal alloys with different weight ratios of Sn and Bi in the bulk are employed for harvesting Bi2O3‐doped SnO nanosheets. In this model, Sn shows a much stronger tendency than Bi to occupy surface sites of the Bi–Sn alloys, even at the very high concentrations of Bi in the bulk. This provides the opportunity for creating SnO 2D sheets with tightly controlled Bi2O3 dopants. By way of example, it is demonstrated how such nanosheets could be made selective to both reducing and oxidizing environmental gases. The process demonstrated here offers significant opportunities for future synthesis and fabrication processes in the electronics industries.

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“…119 Liquid metal-based methods have also been applied to synthesise Bi 2 Te 3 , a topological insulator, highlighting the remarkable versatility of these methods. 128 In this case, the Bi 2 Te 3 produced was also used for NO 2 gas sensing applications, revealing an outstanding detection limit of 0.90 ppm and excellent selectivity when operating at near room temperature.…”

Section: Gas Sensorsmentioning

confidence: 99%