1996
DOI: 10.1109/jssc.1996.542303
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Bit-line clamped sensing multiplex and accurate high voltage generator for quarter-micron flash memories

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Cited by 28 publications
(9 citation statements)
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“…With the features of high-energy efficiency, small area, low-power consumption and regulated voltage generation, the HVG is a key module in an EEPROM. It is usually applied to the EEPROM in RFID transponders, direct current DC-DC converters and power management chips, to write or to erase floating-gate devices [10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%
“…With the features of high-energy efficiency, small area, low-power consumption and regulated voltage generation, the HVG is a key module in an EEPROM. It is usually applied to the EEPROM in RFID transponders, direct current DC-DC converters and power management chips, to write or to erase floating-gate devices [10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%
“…For the programming, reading and erasing of the floating-gate semiconductor devices, charge pumps have been applied to nonvolatile memories such as the EEPROM and the embedded flash [1] [2]. Charge pumps are usually used to generate voltages which are higher than the supply voltage or lower than the ground voltage.…”
Section: Introductionmentioning
confidence: 99%
“…Charge pump circuits are usually applied to the nonvolatile memories, such as EEPROM or flash memories, to write or to erase the floating-gate devices [1]- [4]. In addition, charge pump circuits had been used in some low-voltage designs to improve the circuit performance [5], [6].…”
Section: Introductionmentioning
confidence: 99%