2012 IEEE International Symposium on Hardware-Oriented Security and Trust 2012
DOI: 10.1109/hst.2012.6224312
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Bit string analysis of Physical Unclonable Functions based on resistance variations in metals and transistors

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Cited by 7 publications
(5 citation statements)
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“…In [15], we show a 'bowl-shaped' pattern exists in the M1 voltages across the 2-D array of SMCs and indicated that computing inter-metal layer voltage differences (as we do here) effectively eliminates it. The basic problem with using the VDC to compute the analog difference directly deals with the different sensitivities that exist for Cal0 and Cal1.…”
Section: Vdc Experimental Resultssupporting
confidence: 58%
See 1 more Smart Citation
“…In [15], we show a 'bowl-shaped' pattern exists in the M1 voltages across the 2-D array of SMCs and indicated that computing inter-metal layer voltage differences (as we do here) effectively eliminates it. The basic problem with using the VDC to compute the analog difference directly deals with the different sensitivities that exist for Cal0 and Cal1.…”
Section: Vdc Experimental Resultssupporting
confidence: 58%
“…SRAMs [11][12], in leakage current [13], in metal resistance [14][15], in optics and phase change [16], in sensors [17], in switching variations [18], in sub-threshold design [19], in…”
Section: Introductionmentioning
confidence: 99%
“…After calibration, S 21 measurements were taken from each board and post-processed to extract a set of response characteristics including center rejection frequency, maximum insertion loss (lowest -dB), fractional bandwidth (FBW), and points of maximum roll-off (slope of curve). The values of these parameters were then combined with the frequency and insertion loss after applying a modulus technique similar to that in References [10,39]. We use a modulus operation to ensure an unbiased response bitstring, defined here as a 15-bit ID for each NotchPUF PCB, as we explain further below.…”
Section: Methodsmentioning
confidence: 99%
“…Each architecture defines a source of entropy, that is, device-level features that vary randomly because of non-zero manufacturing tolerances. For example, Reference [2] leverages random variations in transistor threshold voltages, Reference [3] uses variations in speckle patterns, References [4][5][6][7] measure variations in delay chains and ring oscillators (ROs), Reference [8] reads out random power-up patterns in SRAMs, while References [9,10] leverage variations in metal resistance.…”
Section: Introductionmentioning
confidence: 99%
“…It should be noted that other PUF designs which are effectively based on measuring differences in resistance values have been proposed. Those designs are based on materials such as magnetoresistive RAM (MRAM) [42], memristors [43,44], and on-chip transistors [45] and metal wires [45,46]. These designs share a common theme with our proposed thermistor PUF of using unique resistances to produce a response.…”
Section: Comparison To Existing Designsmentioning
confidence: 99%