Black phosphorus: a two-dimension saturable absorption material for mid-infrared Q-switched and mode-locked fiber lasers

Li, Jianfeng; Luo, Hongyu; Zhai, Bo; Lu, Rongguo; Guo, Zhinan; Zhang, Han; Liu, Yong

doi:10.1038/srep30361

Cited by 264 publications

(112 citation statements)

References 72 publications

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“…Apart from its ability to tune the band gap between the valence band and conduction band local extrema, strain also plays a significant role in tuning the effective masses, thereby affecting the exciton anisotropy and binding strength 75. The properties of BP depends on the layer thickness,42 applied strain force,45, 48, 52, 53, 64, 76 stacking order77, 78 and external electric field,79 enabling the realization of devices for different applications such as electronics,35, 37, 80, 81, 82, 83 optoelectronics,84, 85, 86 energy storage,79, 87 saturable absorbers (SA),2, 88, 89, 90, 91, 92 pulsed lasers93, 94, 95 and sensing 96…”

Section: Structure and Fundamentals Of Phosphorenementioning

confidence: 99%

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

et al. 2017

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The challenge of science and technology is to design and make materials that will dominate the future of our society. In this context, black phosphorus has emerged as a new, intriguing two‐dimensional (2D) material, together with its monolayer, which is referred to as phosphorene. The exploration of this new 2D material demands various fabrication methods to achieve potential applications— this demand motivated this review. This article is aimed at supplementing the concrete understanding of existing phosphorene fabrication techniques, which forms the foundation for a variety of applications. Here, the major issue of the degradation encountered in realizing devices based on few‐layered black phosphorus and phosphorene is reviewed. The prospects of phosphorene in future research are also described by discussing its significance and explaining ways to advance state‐of‐art of phosphorene‐based devices. In addition, a detailed presentation on the demand for future studies to promote well‐systemized fabrication methods towards large‐area, high‐yield and perfectly protected phosphorene for the development of reliable devices in optoelectronic applications and other areas is offered.

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Section: Structure and Fundamentals Of Phosphorenementioning

confidence: 99%

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

et al. 2017

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“…Passively Q-switched fiber lasers based on SAs have been recognized as an ideal approach to generate high energy pulses owing to their compactness, high efficiency and good beam quality, in contrast to the actively modulated counterpart. A variety of SAs have been investigated and applied in the Q-switched fiber laser sources emitting in the ~3 μm wavelength region, such as ion-doped crystals [23], semiconductor saturable absorption mirrors (SESAMs) [24], graphene [25][26], transition metal dichalcogenides [27], black phosphorus [28][29] and other graphene-like novel two dimensional (2D) materials. TIs, emerging as one kind of Dirac materials, have attracted considerable attention in recent years as effective ultra-broadband SAs for pulsed laser applications benefiting from their unique broadband saturable absorption property, high damage threshold and tunable modulation depth [30][31][32].…”

Section: B Q-switched Operation Regimementioning

confidence: 99%

Widely Wavelength-Tunable Mid-Infrared Fluoride Fiber Lasers

Liu

Huang

et al. 2018

IEEE J. Select. Topics Quantum Electron.

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Abstract-We demonstrate widely wavelength-tunable continuous-wave (CW) and Q-switched Er 3+ -doped ZBLAN fluoride fiber lasers operating around 3 μm enabled by a volume Bragg grating (VBG). In the CW operation regime, a total wavelength tuning range of over 160 nm spanning from 2694 nm to 2854 nm has been achieved. For the Q-switched mode of operation, a slightly modified resonator configuration, incorporating a passive Q-switcher, topological insulator Bi2Te3 nanosheets, can produce stable pulse trains with a pulse width of 880 ns at a repetition rate of 81 kHz, while maintaining a wavelength tuning range of 62 nm from 2762 nm to 2824 nm through adjusting the VBG. In both operation regimes, the output spectral width is measured to be <0.3 nm (FWHM) over the whole tuning range. Our work both demonstrates the great wavelength-tuning potential of the Er 3+ -doped fluoride fiber laser, and also paves a way for the development of a range of high performance mid-infrared laser sources.Index Terms-Mid-infrared, wavelength tunable, Q-switched, topological insulator, fiber lasers.

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“…The mode-locked operations are realized at both 1.5 and 2.0 μm, and the ultrashort pulse duration is achieved up to hundreds of femtosecond. Compared to the extensively studied 2D materials SA such as graphene, black phosphorus, MoS 2 , and WS 2 [33][34][35][36][37][38][40][41][42][43][44][45], large-area WSe 2 has less been reported in ultrashort pulse generation. This contribution provides the compelling evidence of WSe 2 as excellent SAs for ultrafast photonic applications.…”

Section: Ultrafast Fiber Laser Applicationmentioning

confidence: 99%

Large-area highly crystalline WSe_2 atomic layers for ultrafast pulsed lasers

Yin

Chen

et al. 2017

Opt. Express

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Large-area and highly crystalline transition metal dichalcogenides (TMDs) films possess superior saturable absorption compared to the TMDs nanosheet counterparts, which make them more suitable as excellent saturable absorbers (SA) for ultrafast laser technology. Thus far, the nonlinear optical properties of large-scale WSe 2 and its applications in ultrafast photonics have not yet been fully investigated. In this work, the saturable absorption of chemical vapor deposition (CVD) grown WSe 2 films with large-scale and high quality are studied and the use of WSe 2 films as a broadband SA for passively mode-locked fiber lasers at both 1.5 and 2 μm ranges is demonstrated. To enhance the light-material interaction, largearea WSe 2 film is tightly transferred onto the side wall of a microfiber to form a hybrid structure, which realizes strong evanescent wave interaction between light and WSe 2 film. The integrated microfiber-WSe 2 device shows a large modulation depth of 54.5%. Using the large-area WSe 2 as a mode-locker, stable soliton mode-locked pulse generation is achieved and the pulse durations of 477 fs (at 1.5 μm) and 1.18 ps (at 2.0 μm) are demonstrated, which suggests that the large-area and highly crystalline WSe 2 films afford an excellent broadband SA for ultrafast photonic applications. References and links 1. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, "Electronics and optoelectronics of two-dimensional transition metal dichalcogenides," Nat. Nanotechnol. 7(11), 699-712 (2012). 2. K. F. Mak and J. Shan, "Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides," Nat. Photonics 10, 216-226 (2016 1974-1981 (2013). 2085-2087 (2012)

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Black phosphorus: a two-dimension saturable absorption material for mid-infrared Q-switched and mode-locked fiber lasers

Cited by 264 publications

References 72 publications

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

Widely Wavelength-Tunable Mid-Infrared Fluoride Fiber Lasers

Large-area highly crystalline WSe_2 atomic layers for ultrafast pulsed lasers

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