Black phosphorus photodetector integrated with Au nanoparticles

Zhang

IEEE Trans. Electron Devices

et al. 2021

Au nanoparticles (NPs) were drop-casted onto germanium (Ge) devices to investigate the influence of Au NPs on the electronic transport and photodetection properties of Ge metal-semiconductor-metal photodetectors. A significant hysteresis behavior was observed in the current-voltage curves of the Au NP-decorated Ge photodetector, which was ascribed to the energy band bending below the Au NPs and the electrostatic effect of image charges in the Au NPs. More interestingly, at the optical communication wavelength of 1.55 µm, the introduction of Au NPs effectively improved the responsivity of the device from 0.18 to 0.92 A/W. Rather than the localized surface plasmon resonance effect, the increase of responsivity in the Au NP-decorated Ge photodetector was caused by a type-II liked energy band alignment, which enhanced the spatial electron-hole separation effect. These results provide inspiration for the development of novel optoelectronic devices. Index Terms-Au nanoparticles (NPs), electric hysteresis loop, electrostatic effect, germanium (Ge) photodetector, photoresponse enhancement. I. INTRODUCTIONG ERMANIUM (Ge) is one of the most promising materials for near-infrared detection [1], [2], owing to the small bandgap (0.67 eV) and the better compatibility with Si-CMOS processes as compared with III−V and II-VI semiconductor materials. However, the low absorption coefficient of Ge material near 1.55 μm, which is attributed to the direct bandgap of 0.8 eV, is still a major obstacle for its application in optical communication [3], [4].

Section: Resultssupporting

confidence: 60%

Hysteresis Behavior and Photoresponse Enhancement in Au Nanoparticle-Decorated Ge Photodetectors

Zhang

IEEE Trans. Electron Devices

et al. 2021

ACS Appl. Mater. Interfaces

“…The device exhibits a good rectification behavior with a moderately low dark current density of ∼6.7 × 10 –5 A/cm 2 (@–2 V bias). It is to be noted that the value of dark current of a device is influenced by the energy barriers at the heterointerfaces. , By fitting the dark characteristics with the diode equation, the ideality factor is estimated to be ∼5.5, which suggests the presence of defects at BP/Si interfaces. Upon illumination of light, the BP-A/Si device shows a photocurrent in the reverse bias configuration (Figure b), which is found to saturate at higher bias.…”

Section: Resultsmentioning

confidence: 99%

“…In this scenario, the integration of noble metal nanostructures (like Ag, Pt, Au etc.) into the 2D landscape is of particular interest due to enhanced light absorption and gigantic field enhancement through localized surface plasmon resonance (LSPR). − Metal nanoparticle (NP)-based plasmonic 2D material hybrids are potentially attractive in the field of novel optoelectronics ,− as they exhibit an enhanced rate of photocarrier generation and subsequent charge transfer through strong light–matter interactions sensitive to metal NP size and morphology. − In particular, 2D plasmonic hybrids have been applied in light emitting diodes and photodetectors. ,, Therefore, the plasmonic Ag-BP hybrid and its integration with Si photonics are of contemporary interests; however, a detailed study of the same is yet to be undertaken.…”

Section: Introductionmentioning

confidence: 99%

Plasmonic Silver Nanoparticle-Mediated Enhanced Broadband Photoresponse of Few-Layer Phosphorene/Si Vertical Heterojunctions

Jana

Mukherjee

Bhaktha

et al. 2021

We report the superior broadband photodetection characteristics of few-layer phosphorene known as black phosphorus (BP) nanosheets integrated with silver nanoparticles (Ag NPs) using vertical heterojunctions on a Si platform. The exfoliation of BP nanosheets and preparation of an Ag NP:BP (Ag-BP) hybrid have been accomplished through environment-friendly and cost-effective chemical routes. The hybrid sample exhibits broadband light absorption with a strong plasmonic peak around ∼425 nm due to the localized surface plasmon resonance (LSPR) of Ag NPs of average size ∼6.0 nm. Spectroscopic analysis of the Ag-BP hybrid ascertains strong light−matter interactions around the LSPR band of Ag NPs. The size-dependent optical response of BP nanostructure/Si state-of-the-art broadband (300−1600 nm) photodiodes has been studied extensively. The enhancement of broadband photoresponse characteristics is demonstrated using the plasmonic Ag-BP 0D-2D hybrid nanostructure compared to pristine BP, where the peak responsivity in the former is shifted to the visible region (∼440 nm) compared to UV response (∼340 nm) of the latter. The tunable spectral responsivity with a peak value of ∼3.2 A/W (@ ∼440 nm and −5 V) for the Ag-BP/Si heterojunction device demonstrates the potential of plasmonic BP hybrids for future nanophotonic devices.

Laser & Photonics Reviews

“…[ 199 ] and Jeon et al. [ 200 ] also reported the enhanced BP MSM‐PDs through integrate the waveguide or Au nanoparticles, NEP less than 1 nW Hz −1/2 was obtained by integrating the waveguide. In the same year, You et al.…”

Section: Research Status Of Msm‐pdsmentioning

confidence: 99%

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Shi

Chen

Zhai

et al. 2020

Metal–inorganic semiconductor–metal photodetectors (MSM‐PDs) have received great attention in many areas, such as optical fiber communication, sensing, missile guidance, etc., due to their inherent merits of high speed, high sensitivity, and easy integration. This review focuses on MSM‐PDs with the semiconductor layer made of inorganic materials including traditional semiconductors (such as GaAs and Si), the third‐generation wide bandgap semiconductors (such as GaN, ZnO, and SiC), as well as several emerging semiconductors (such as perovskites and 2D materials). First, the basic structures of MSM‐PDs, including the planar and vertical configurations, are presented. Then, their working principles of MSM‐PDs are discussed. Subsequently, the research progresses on MSM‐PDs consisting of different photosensitive semiconductor materials are described in detail. Additionally, the efforts to optimize MSM‐PDs from the aspects of dark current, response speed, responsivity, spectral adjustment, etc., are also introduced. Finally, the review is concluded with the perspectives of MSM‐PDs from the authors’ vision.