High-Power Diode Laser Technology XVIII 2020
DOI: 10.1117/12.2543306
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Blue high power InGaN semiconductor laser diodes: Design optimization of laser bars and single emitters for best performance and reliability

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Cited by 9 publications
(4 citation statements)
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“…A need for a noninvasive, portable clinical device for direct, accurate and real-time in-vivo hematocrit measurement on patients suffering from anemia or polycythemia as well as blood donors, surgical patients, and trauma victims still exists. Scalable optical contrast of hemoglobin molecule, advancement of smaller sized optical sources (laser diodes, high power LEDs) [3,4] and highly sensitive broadband ultrasound detectors [5,6] enable photoacoustic technique to emerge as a potential candidate for clinically acceptable screening tool [7]. Oxygenated or deoxygenated hemoglobin molecule inside a RBC acts as chromophore to produce pressure wave (photoacoustic signal) absorbing very short duration (of the order of nanosecond) optical energy pulses.…”
Section: Introductionmentioning
confidence: 99%
“…A need for a noninvasive, portable clinical device for direct, accurate and real-time in-vivo hematocrit measurement on patients suffering from anemia or polycythemia as well as blood donors, surgical patients, and trauma victims still exists. Scalable optical contrast of hemoglobin molecule, advancement of smaller sized optical sources (laser diodes, high power LEDs) [3,4] and highly sensitive broadband ultrasound detectors [5,6] enable photoacoustic technique to emerge as a potential candidate for clinically acceptable screening tool [7]. Oxygenated or deoxygenated hemoglobin molecule inside a RBC acts as chromophore to produce pressure wave (photoacoustic signal) absorbing very short duration (of the order of nanosecond) optical energy pulses.…”
Section: Introductionmentioning
confidence: 99%
“…However, despite the progresses, the power from a single blue laser chip is still more than four times lower than that of "more traditional" GaAs-based high power laser chips used for emission in the 800 nm to 1000 nm range. Indeed, current commercially available GaN laser chips are able to emit up to 5 W, 4 as compared to more than 20 W of GaAs chips. Therefore, in order to obtain the hundreds of watts typically requested by high speed industrial materials processing, multiple chips must be combined in a single package to obtain to so-called "multi-emitter modules".…”
Section: Introductionmentioning
confidence: 99%
“…In particular, when combined, the latter two listed functionalities realize the Phase and Amplitude Setting circuits (PASs), key components in Radio Frequency (RF) front ends, and more specifically, for phased array systems. In addition to millimeter-wave and microwave circuits in high-end electronic systems, GaN has been extensively utilized in the fabrication of optoelectronic devices, such as lasers [11][12][13][14][15], light emitting diodes (LEDs) [16][17][18][19][20][21], and solar cells [22][23][24].…”
Section: Introductionmentioning
confidence: 99%