Blue light emitting diodes on Si(001) grown by MOVPE

Abstract

. Lp, 78.55.Cr, 78.60.Fi, 81.15.Gh, 85.60.Jb We report on the growth of GaN-based light emission diodes on Si(001) substrates. The optically active region of the samples consists of a fivefold InGaN/GaN multiple quantum well grown on a 2.5 µm thick AlGaN/GaN buffer layer structure. By growing on 4° off-oriented substrates and inserting four thin lowtemperature AlN interlayers, a flat, smooth, and crack-free surface was obtained. The presented samples show an electrically stimulated emission of bright blue light at 455 and 490 nm, respectively. The crystallographic properties were analyzed by X-ray diffraction measurements and transmission electron microscopy, and the optical properties by photo-, electro-, and spatially resolved cathodoluminescence. The local peak-wavelength distribution amounts to 14.8 meV.

Prospects of III-nitride optoelectronics grown on Si

“…The growth of wurtzite-structure gallium nitride on such SOI substrates has been demonstrated using MBE. Alternatively, single-domain GaN can be grown on Si(1 0 0) with a 4 • miscut towards the Si[1 1 0] direction (Schulze et al 2006(Schulze et al , 2007(Schulze et al , 2008. The idea of using a misoriented substrate is to form biatomic steps, allowing only one GaN crystal orientation to be selected.…”

Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

“…uring the last decade, many efforts have been dedicated to the realization of nitride-based light emitting diodes (LEDs) on Si substrates. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] Indeed, although sapphire and SiC substrates are the most usual substrates for the realization of nitride-based LEDs, there are several key advantages to use Si substrates. We may cite advantages such as low cost, large size avaibility and high quality, good electrical and thermal conductibilities.…”

“…However, the growth of high quality wurtzite GaN on such substrates is very difficult and only one group has succeeded in the demonstration of blue electroluminescence on Si(001) substrate. 16,18,19) Recently, the (110) orientation has been the subject of many studies because it leads to superior transport properties in the channel of advanced metal oxide semiconductor (MOS) field effect transistors and could enhance the speed in complementary(C)-MOS circuits. 20) Then it is of particular interest to assess the compatibility of the (110) orientation with the realization of blue nitride-based LEDs.…”