Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

Abstract

We have fabricated and characterized blue (Ga,In)N/GaN multiple quantum well light emitting diodes grown on a Si(110) substrate by molecular beam epitaxy. For a 20 mA current, we have found that the operating voltage and the series resistance are as low as 3.5 V and 17 Ω, respectively. A maximum light output power of 72 µW is obtained as measured on the wafer. These characteristics are almost identical to those obtained on a reference sample grown on the commonly used Si(111) orientation.

Growth of GaN based structures on Si(110) by molecular beam epitaxy

“…More details on these structures and on device process and characterizations have been previously published in Refs. [15,16]. Table 3 summarizes these results and compares them with ones obtained on similar structures and devices on Si(1 1 1).…”

“…A new experimental procedure (compared with our previous results in Ref. [16]) has been used to estimate the total output power of the devices [25]. The output power at an injection current of 100 mA is 106 mW on Si(1 1 0), whereas for comparison it is 102 mW at the same current for the LEDs grown on Si(1 1 1) substrate.…”

“…1) and may offer a unique in-plane orientation for the nitride films as suggested by Dadgar et al [12] and Contreras et al [13], which could reduce defect density. However, to the authors knowledge there are only a few reports on the growth of GaN on the [1 1 0] orientation of silicon by metal organic vapor phase epitaxy [12][13][14] and the growth by molecular beam epitaxy (MBE) [15,16]. In this work, GaN based heterostructures were grown by molecular beam epitaxy on Si(1 1 0).…”

Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces

“…Furthermore, the radial averaged biaxial modulus of Si(1 1 0) (180 GPa99Si[1 0 0] and 260 GPa99Si[½1 1 0]) [12] is smaller than that on Si(1 1 1) (229 GPa) [13] leading to a larger compensating convex bowing at growth temperatures, whereas the measured amount of change in the wafer curvature during cooling is roughly the same. Moreover, these advanced properties of GaN layers grown on Si(1 1 0) could already successfully be implemented on fully processed LED structures [14,15].…”

On the anisotropic wafer curvature of GaN-based heterostructures on Si(110) substrates grown by MOVPE

“…The better epitaxial fit on Si(1 1 0) may contribute to improved film quality. Indeed, some reports confirm this assumption by showing equal or even superior film and device quality [5,6]. For further improvements in GaN-based epitaxy, basic knowledge must be gathered on the impact of anisotropic lattice matching.…”