Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces

Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy

“…Characterization by high resolution X-ray diffraction (HRXRD) of a 47 nm thick layer of GaN revealed a (0 0 0 2) and (1 0 1 2) o full width at half maximum (FWHM) value of respectively 408 and 935 arc sec. This is comparable to the best GaN grown on Si(1 1 1) by metal organic chemical vapor phase deposition, obtained by growing 500 nm GaN and using AlN and AlGaN buffer layers in between the GaN and Si substrate [5]. Our GaN layers show comparable quality for a thickness of only 47 nm GaN and without using any buffer layer, which is, as mentioned before, useful for vertical devices.…”

Growth of GaN based structures on Si(110) by molecular beam epitaxy

“…X-ray diffraction (XRD) is used to assess the quality of (1 1 1) with a lattice mismatch of about 18% between AlN (a ¼3.112Å) or GaN (a ¼3.188Å) and silicon (a¼5.43/O2¼3.839Å). As reported for MOCVD growth [12][13][14], the in-plane orientation on Si(1 1 0) may be driven by domain matching epitaxy considerations [20]. Indeed, the lattice mismatch towards Si [0 0 1] direction is À 0.7% and 1.7% for AlN and GaN, respectively, when one considers the matching between two nitride lattice planes and the Si lattice.…”

“…1) and may offer a unique in-plane orientation for the nitride films as suggested by Dadgar et al [12] and Contreras et al [13], which could reduce defect density. However, to the authors knowledge there are only a few reports on the growth of GaN on the [1 1 0] orientation of silicon by metal organic vapor phase epitaxy [12][13][14] and the growth by molecular beam epitaxy (MBE) [15,16]. In this work, GaN based heterostructures were grown by molecular beam epitaxy on Si(1 1 0).…”

Self-generated microcracks in an ultra-thin AlN/GaN superlattice interlayer and their influences on the GaN epilayer grown on Si(110) substrates by metal–organic chemical vapor deposition

“…To overcome the crack problem, relaxation structures trying to compensate the CTE-induced tensile strain during the cooling down process after the growth have been proposed and the crack-free thick GaN and the device operations grown on Si substrates have been demonstrated. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] Among the proposed relaxation structures, an ultra-thin AlN/GaN superlattice interlayer (SL IL) structure shows an unique feature because it makes use of the naturally generated micro-crack (MC) during the cooling down process in the SL IL to compensate the CTE-induced tensile strain in the plasma-assisted molecular beam epitaxy (rf-MBE). 18,19 As a result, a crack-free 4 µm thick continuous GaN epilayer grown on a Si(110) substrate has been realized by rf-MBE.…”